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CSD17578Q5AT Folha de dados(PDF) 1 Page - Texas Instruments

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Nome de Peças CSD17578Q5AT
Descrição Electrónicos  30V N-Channel NexFET Power MOSFETs
Download  13 Pages
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Fabricante Electrônico  TI1 [Texas Instruments]
Página de início  http://www.ti.com
Logo TI1 - Texas Instruments

CSD17578Q5AT Folha de dados(HTML) 1 Page - Texas Instruments

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Qg - Gate Charge (nC)
0
3
6
9
12
15
18
0
2
4
6
8
10
D004
ID = 10 A
VDS = 15 V
VGS - Gate-to-Source Voltage (V)
0
2
4
6
8
10
12
14
16
18
20
0
4
8
12
16
20
24
28
D007
TC = 25°C, I D = 10 A
TC = 125°C, I D = 10 A
1
D
2
D
3
D
4
D
D
5
G
6
S
7
S
8
S
P0093-01
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CSD17578Q5A
SLPS526 – MARCH 2015
CSD17578Q5A 30 V N-Channel NexFET™ Power MOSFETs
1 Features
Product Summary
1
Low Qg and Qgd
TA = 25°C
TYPICAL VALUE
UNIT
Low RDS(on)
VDS
Drain-to-Source Voltage
30
V
Low Thermal Resistance
Qg
Gate Charge Total (4.5 V)
7.9
nC
Qgd
Gate Charge Gate-to-Drain
2.0
nC
Avalanche Rated
VGS = 4.5 V
7.9
m
Pb-Free Terminal Plating
RDS(on)
Drain-to-Source On-Resistance
VGS = 10 V
5.9
m
RoHS Compliant
VGS(th)
Threshold Voltage
1.5
V
Halogen Free
SON 5 mm × 6 mm Plastic Package
.
Ordering Information(1)
2 Applications
Device
Media
Qty
Package
Ship
CSD17578Q5A
13-Inch Reel
2500
Point-of-Load Synchronous Buck Converter for
SON 5 x 6 mm
Tape and
Plastic Package
Reel
CSD17578Q5AT
7-Inch Reel
250
Applications in Networking, Telecom, and
Computing Systems
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Optimized for Control FET Applications
Absolute Maximum Ratings
3 Description
TA = 25°C
VALUE
UNIT
This 30 V, 5.9 m
Ω, SON 5 mm x 6 mm NexFET™
VDS
Drain-to-Source Voltage
30
V
power MOSFET is designed to minimize losses in
VGS
Gate-to-Source Voltage
±20
V
power conversion applications.
Continuous Drain Current (Package limited)
25
Top View
Continuous Drain Current (Silicon limited),
ID
59
A
TC = 25°C
Continuous Drain Current(1)
16
IDM
Pulsed Drain Current(2)
132
A
Power Dissipation(1)
3.1
PD
W
Power Dissipation, TC = 25°C
42
TJ,
Operating Junction and
–55 to 150
°C
Tstg
Storage Temperature Range
Avalanche Energy, single pulse
EAS
23
mJ
ID = 22 A, L = 0.1 mH
(1) Typical RθJA = 40°C/W on a 1 inch
2, 2 oz. Cu pad on a 0.06
.
inch thick FR4 PCB.
.
(2) Max RθJC = 3.8°C/W, pulse duration ≤100 μs, duty cycle ≤1%
RDS(on) vs VGS
Gate Charge
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.


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