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CSD17578Q5AT Folha de dados(PDF) 1 Page - Texas Instruments |
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CSD17578Q5AT Folha de dados(HTML) 1 Page - Texas Instruments |
1 / 13 page Qg - Gate Charge (nC) 0 3 6 9 12 15 18 0 2 4 6 8 10 D004 ID = 10 A VDS = 15 V VGS - Gate-to-Source Voltage (V) 0 2 4 6 8 10 12 14 16 18 20 0 4 8 12 16 20 24 28 D007 TC = 25°C, I D = 10 A TC = 125°C, I D = 10 A 1 D 2 D 3 D 4 D D 5 G 6 S 7 S 8 S P0093-01 Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD17578Q5A SLPS526 – MARCH 2015 CSD17578Q5A 30 V N-Channel NexFET™ Power MOSFETs 1 Features Product Summary 1 • Low Qg and Qgd TA = 25°C TYPICAL VALUE UNIT • Low RDS(on) VDS Drain-to-Source Voltage 30 V • Low Thermal Resistance Qg Gate Charge Total (4.5 V) 7.9 nC Qgd Gate Charge Gate-to-Drain 2.0 nC • Avalanche Rated VGS = 4.5 V 7.9 m Ω • Pb-Free Terminal Plating RDS(on) Drain-to-Source On-Resistance VGS = 10 V 5.9 m Ω • RoHS Compliant VGS(th) Threshold Voltage 1.5 V • Halogen Free • SON 5 mm × 6 mm Plastic Package . Ordering Information(1) 2 Applications Device Media Qty Package Ship CSD17578Q5A 13-Inch Reel 2500 • Point-of-Load Synchronous Buck Converter for SON 5 x 6 mm Tape and Plastic Package Reel CSD17578Q5AT 7-Inch Reel 250 Applications in Networking, Telecom, and Computing Systems (1) For all available packages, see the orderable addendum at the end of the data sheet. • Optimized for Control FET Applications Absolute Maximum Ratings 3 Description TA = 25°C VALUE UNIT This 30 V, 5.9 m Ω, SON 5 mm x 6 mm NexFET™ VDS Drain-to-Source Voltage 30 V power MOSFET is designed to minimize losses in VGS Gate-to-Source Voltage ±20 V power conversion applications. Continuous Drain Current (Package limited) 25 Top View Continuous Drain Current (Silicon limited), ID 59 A TC = 25°C Continuous Drain Current(1) 16 IDM Pulsed Drain Current(2) 132 A Power Dissipation(1) 3.1 PD W Power Dissipation, TC = 25°C 42 TJ, Operating Junction and –55 to 150 °C Tstg Storage Temperature Range Avalanche Energy, single pulse EAS 23 mJ ID = 22 A, L = 0.1 mH (1) Typical RθJA = 40°C/W on a 1 inch 2, 2 oz. Cu pad on a 0.06 . inch thick FR4 PCB. . (2) Max RθJC = 3.8°C/W, pulse duration ≤100 μs, duty cycle ≤1% RDS(on) vs VGS Gate Charge 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. |
Nº de peça semelhante - CSD17578Q5AT |
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Descrição semelhante - CSD17578Q5AT |
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