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CSD18502Q5BT Folha de dados(PDF) 1 Page - Texas Instruments |
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CSD18502Q5BT Folha de dados(HTML) 1 Page - Texas Instruments |
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1 / 15 page  VGS - Gate-to-Source Voltage (V) 0 2 4 6 8 10 12 14 16 18 20 0 1 2 3 4 5 6 7 8 D007 TC = 25°C, I D = 30 A TC = 125°C, I D = 30 A Qg - Gate Charge (nC) 0 5 10 15 20 25 30 35 40 45 50 55 0 2 4 6 8 10 D004 ID = 30 A VDS = 20 V 1 D 2 D 3 D 4 D D 5 G 6 S 7 S 8 S P0093-01 Product Folder Sample & Buy Technical Documents Tools & Software Support & Community Reference Design CSD18502Q5B SLPS320A – NOVEMBER 2012 – REVISED JULY 2015 CSD18502Q5B 40 V N-Channel NexFET™ Power MOSFET 1 Features Product Summary 1 • Ultra-Low Qg and Qgd TA = 25°C TYPICAL VALUE UNIT • Low Thermal Resistance VDS Drain to source voltage 40 V • Avalanche Rated Qg Gate charge total (4.5 V) 25 nC Qgd Gate charge gate to drain 8.4 nC • Logic Level VGS = 4.5 V 2.5 m Ω • Pb-Free Terminal Plating RDS(on) Drain to source on resistance VGS = 10 V 1.8 m Ω • RoHS Compliant VGS(th) Threshold voltage 1.8 V • Halogen-Free • SON 5 mm × 6 mm Plastic Package Ordering Information(1) DEVICE QTY MEDIA PACKAGE SHIP 2 Applications CSD18502Q5B 2500 13-Inch Reel SON 5 mm × 6 mm Tape and Plastic Package Reel • DC-DC Conversion CSD18502Q5BT 250 7-Inch Reel • Secondary Side Synchronous Rectifier (1) For all available packages, see the orderable addendum at the end of the datasheet. • Motor Control Absolute Maximum Ratings 3 Description TA = 25°C VALUE UNIT This 40-V, 1.8-m Ω, 5 mm × 6 mm NexFET™ power VDS Drain to source voltage 40 V MOSFET is designed to minimize losses in power VGS Gate to source voltage ±20 V conversion applications. Continuous drain current (package limited) 100 Continuous drain current (silicon limited), TC Top View ID 204 A = 25°C Continuous drain current(1) 26 IDM Pulsed drain current(2) 400 A Power dissipation(1) 3.2 PD W Power dissipation, TC = 25°C 156 TJ Operating junction temperature –55 to 150 °C Tstg Storage temperature –55 to 150 °C Avalanche energy, single pulse EAS 387 mJ ID = 88 A, L = 0.1 mH, RG = 25 Ω (1) Typical RθJA = 40°C/W on a 1 inch 2 , 2 oz. Cu pad on a 0.06 inch thick FR4 PCB. (2) Max RθJC = 0.8°C/W, pulse duration ≤100 μs, duty cycle ≤1% RDS(on) vs VGS Gate Charge 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. |
Nº de peça semelhante - CSD18502Q5BT |
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Descrição semelhante - CSD18502Q5BT |
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