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CSD18504Q5AT Folha de dados(PDF) 6 Page - Texas Instruments

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Nome de Peças CSD18504Q5AT
Descrição Electrónicos  40V N-Channel NexFET Power MOSFET
Download  13 Pages
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Fabricante Electrônico  TI1 [Texas Instruments]
Página de início  http://www.ti.com
Logo TI1 - Texas Instruments

CSD18504Q5AT Folha de dados(HTML) 6 Page - Texas Instruments

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background image
0
10
20
30
40
50
60
−50
−25
0
25
50
75
100
125
150
175
TC - Case Temperature (ºC)
G001
0.1
1
10
100
1000
5000
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
10us
100us
1ms
10ms
DC
Single Pulse
Max RthetaJC = 2.0ºC/W
G001
10
100
0.01
0.1
1
TAV - Time in Avalanche (mS)
TC = 25ºC
TC = 125ºC
G001
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
−75
−25
25
75
125
175
TC - Case Temperature (ºC)
VGS = 4.5V
VGS = 10V
ID = 17A
G001
0.0001
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
VSD − Source-to-Drain Voltage (V)
TC = 25°C
TC = 125°C
G001
CSD18504Q5A
SLPS366E – JUNE 2012 – REVISED SEPTEMBER 2014
www.ti.com
Typical MOSFET Characteristics (continued)
(TA = 25°C unless otherwise stated)
Figure 8. Normalized On-State Resistance vs Temperature
Figure 9. Typical Diode Forward Voltage
Figure 10. Maximum Safe Operating Area
Figure 11. Single Pulse Unclamped Inductive Switching
Figure 12. Maximum Drain Current vs Temperature
6
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