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CSD18537NQ5A Folha de dados(PDF) 5 Page - Texas Instruments

Nome de Peças CSD18537NQ5A
Descrição Electrónicos  60V N-Channel NexFET Power MOSFETs
Download  14 Pages
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Fabricante Electrônico  TI1 [Texas Instruments]
Página de início  http://www.ti.com
Logo TI1 - Texas Instruments

CSD18537NQ5A Folha de dados(HTML) 5 Page - Texas Instruments

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2
2.2
2.4
2.6
2.8
3
3.2
3.4
3.6
−75
−25
25
75
125
175
TC - Case Temperature (ºC)
ID = 250uA
G001
0
4
8
12
16
20
24
28
32
36
0
2
4
6
8
10
12
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VGS - Gate-to- Source Voltage (V)
TC = 25°C Id = 12A
TC = 125ºC Id = 12A
G001
0
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10
0
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Qg - Gate Charge (nC)
ID = 12A
VDS = 30V
G001
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10000
20000
0
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60
VDS - Drain-to-Source Voltage (V)
Ciss = Cgd + Cgs
Coss = Cds + Cgd
Crss = Cgd
G001
0
5
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25
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0
0.1
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VDS - Drain-to-Source Voltage (V)
VGS =10V
VGS =8V
VGS =6V
G001
0
10
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0
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VGS - Gate-to-Source Voltage (V)
TC = 125°C
TC = 25°C
TC = −55°C
VDS = 5V
G001
CSD18537NQ5A
www.ti.com
SLPS391B – JUNE 2013 – REVISED JULY 2014
Typical MOSFET Characteristics (continued)
(TA = 25°C unless otherwise stated)
Figure 2. Saturation Characteristics
Figure 3. Transfer Characteristics
Figure 4. Gate Charge
Figure 5. Capacitance
Figure 6. Threshold Voltage vs Temperature
Figure 7. On-State Resistance vs Gate-to-Source Voltage
Copyright © 2013–2014, Texas Instruments Incorporated
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