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CSD19531Q5A Folha de dados(PDF) 5 Page - Texas Instruments

Nome de Peças CSD19531Q5A
Descrição Electrónicos  100V N-Channel NexFET Power MOSFETs
Download  14 Pages
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Fabricante Electrônico  TI1 [Texas Instruments]
Página de início  http://www.ti.com
Logo TI1 - Texas Instruments

CSD19531Q5A Folha de dados(HTML) 5 Page - Texas Instruments

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1.5
1.7
1.9
2.1
2.3
2.5
2.7
2.9
3.1
3.3
−75
−25
25
75
125
175
TC - Case Temperature (ºC)
ID = 250uA
G001
0
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20
0
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VGS - Gate-to- Source Voltage (V)
TC = 25°C,I D = 16A
TC = 125°C,I D = 16A
G001
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Qg - Gate Charge (nC)
ID = 16A
VDS = 50V
G001
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100000
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VDS - Drain-to-Source Voltage (V)
Ciss = Cgd + Cgs
Coss = Cds + Cgd
Crss = Cgd
G001
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VDS - Drain-to-Source Voltage (V)
VGS = 10V
VGS = 8V
VGS = 6V
G001
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VGS - Gate-to-Source Voltage (V)
TC = 125°C
TC = 25°C
TC = −55°C
VDS = 5V
G001
CSD19531Q5A
www.ti.com
SLPS406B – SEPTEMBER 2013 – REVISED MAY 2014
Typical MOSFET Characteristics (continued)
(TA = 25°C unless otherwise stated)
Figure 2. Saturation Characteristics
Figure 3. Transfer Characteristics
Figure 4. Gate Charge
Figure 5. Capacitance
Figure 6. Threshold Voltage vs Temperature
Figure 7. On-State Resistance vs Gate-To-Source Voltage
Copyright © 2013–2014, Texas Instruments Incorporated
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