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CSD19533Q5A Folha de dados(PDF) 1 Page - Texas Instruments

Nome de Peças CSD19533Q5A
Descrição Electrónicos  100V N-Channel NexFET Power MOSFET
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Fabricante Electrônico  TI1 [Texas Instruments]
Página de início  http://www.ti.com
Logo TI1 - Texas Instruments

CSD19533Q5A Folha de dados(HTML) 1 Page - Texas Instruments

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VGS - Gate-to- Source Voltage (V)
TC = 25°C,I D = 13A
TC = 125°C,I D = 13A
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Qg - Gate Charge (nC)
ID = 13A
VDS = 50V
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CSD19533Q5A
SLPS486A – DECEMBER 2013 – REVISED MAY 2014
CSD19533Q5A 100 V N-Channel NexFET™ Power MOSFET
1 Features
Product Summary
1
Ultra-Low Qg and Qgd
TA = 25°C
TYPICAL VALUE
UNIT
Low Thermal Resistance
VDS
Drain-to-Source Voltage
100
V
Avalanche Rated
Qg
Gate Charge Total (10 V)
27
nC
Qgd
Gate Charge Gate to Drain
4.9
nC
Pb-Free Terminal Plating
VGS = 6 V
8.7
m
RoHS Compliant
RDS(on)
Drain-to-Source On Resistance
VGS = 10 V
7.8
m
Halogen Free
VGS(th)
Threshold Voltage
2.8
V
SON 5-mm × 6-mm Plastic Package
.
2 Applications
Ordering Information(1)
Primary Side Telecom
Device
Media
Qty
Package
Ship
CSD19533Q5A
13-Inch Reel
2500
Secondary Side Synchronous Rectifier
SON 5 x 6 mm
Tape and
Plastic Package
Reel
CSD19533Q5AT
7-Inch Reel
250
Motor Control
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
3 Description
This 100 V, 7.8 m
Ω, SON 5 mm × 6 mm NexFET™
Absolute Maximum Ratings
power MOSFET is designed to minimize losses in
TA = 25°C
VALUE
UNIT
power conversion applications.
VDS
Drain-to-Source Voltage
100
V
Top View
VGS
Gate-to-Source Voltage
±20
V
Continuous Drain Current (Package limited)
100
Continuous Drain Current (Silicon limited),
ID
75
A
TC = 25°C
Continuous Drain Current, TA = 25 °C
(1)
13
IDM
Pulsed Drain Current, TA = 25 °C
(2)
231
A
Power Dissipation(1)
3.2
PD
W
Power Dissipation, TC = 25°C
96
TJ,
Operating Junction and
–55 to 150
°C
Tstg
Storage Temperature Range
Avalanche Energy, single pulse
EAS
106
mJ
ID = 46 A, L = 0.1 mH, RG = 25 Ω
(1) Typical RθJA = 40 °C/W on a 1-inch
2, 2-oz. Cu pad on a
0.06-inch thick FR4 PCB.
(2) Max RθJC = 1.3°C/W, pulse duration ≤100 μs, duty cycle ≤1%
RDS(on) vs VGS
Gate Charge
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.


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