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CSD19538Q3A Folha de dados(PDF) 5 Page - Texas Instruments

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Nome de Peças CSD19538Q3A
Descrição Electrónicos  100 V N-Channel NexFET Power MOSFET
Download  13 Pages
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Fabricante Electrônico  TI1 [Texas Instruments]
Página de início  http://www.ti.com
Logo TI1 - Texas Instruments

CSD19538Q3A Folha de dados(HTML) 5 Page - Texas Instruments

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TC - Case Temperature (qC)
-75
-50
-25
0
25
50
75
100
125
150
175
2.2
2.4
2.6
2.8
3
3.2
3.4
3.6
3.8
D006
VGS - Gate-to-Source Voltage (V)
0
2
4
6
8
10
12
14
16
18
20
0
20
40
60
80
100
120
140
160
180
200
D007
TC = 25qC, ID = 5 A
TC = 125qC, ID = 5 A
Qg - Gate Charge (nC)
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0
1
2
3
4
5
6
7
8
9
10
D004
VDS - Drain-to-Source Voltage (V)
0
10
20
30
40
50
60
70
80
90
100
1
10
100
1000
10000
D005
Ciss = Cgd + Cgs
Coss = Cds + Cgd
Crss = Cgd
VDS - Drain-to-Source Voltage (V)
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0
3
6
9
12
15
18
21
24
27
30
D002
VGS = 6 V
VGS = 8 V
VGS = 10 V
VGS - Gate-to-Source Voltage (V)
1
2
3
4
5
6
7
0
3
6
9
12
15
18
21
24
27
30
D003
TC = 125°C
TC = 25°C
TC = -55°C
5
CSD19538Q3A
www.ti.com
SLPS583 – MAY 2016
Product Folder Links: CSD19538Q3A
Submit Documentation Feedback
Copyright © 2016, Texas Instruments Incorporated
Typical MOSFET Characteristics (continued)
TA = 25°C (unless otherwise stated)
Figure 2. Saturation Characteristics
VDS = 5 V
Figure 3. Transfer Characteristics
ID = 5 A
VDS = 100 V
Figure 4. Gate Charge
Figure 5. Capacitance
ID = 250 µA
Figure 6. Threshold Voltage vs Temperature
Figure 7. On-State Resistance vs Gate-to-Source Voltage


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