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CSD19538Q3AT Folha de dados(PDF) 3 Page - Texas Instruments |
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CSD19538Q3AT Folha de dados(HTML) 3 Page - Texas Instruments |
3 / 13 page 3 CSD19538Q3A www.ti.com SLPS583 – MAY 2016 Product Folder Links: CSD19538Q3A Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated 5 Specifications 5.1 Electrical Characteristics TA = 25°C PARAMETER TEST CONDITIONS MIN TYP MAX UNIT STATIC CHARACTERISTICS BVDSS Drain-to-source voltage VGS = 0 V, ID = 250 μA 100 V IDSS Drain-to-source leakage current VGS = 0 V, VDS = 80 V 1 μA IGSS Gate-to-source leakage current VDS = 0 V, VGS = 20 V 100 nA VGS(th) Gate-to-source threshold voltage VDS = VGS, ID = 250 μA 2.8 3.2 3.8 V RDS(on) Drain-to-source on-resistance VGS = 6 V, ID = 5 A 58 72 m Ω VGS = 10 V, ID = 5 A 49 59 m Ω gfs Transconductance VDS = 10 V, ID = 5 A 6.1 S DYNAMIC CHARACTERISTICS Ciss Input capacitance VGS = 0 V, VDS = 50 V, ƒ = 1 MHz 349 454 pF Coss Output capacitance 69 90 pF Crss Reverse transfer capacitance 12.6 16.4 pF RG Series gate resistance 4.6 9.2 Ω Qg Gate charge total (10 V) VDS = 50 V, ID = 5 A 4.3 nC Qgd Gate charge gate to drain 0.8 nC Qgs Gate charge gate to source 1.6 nC Qg(th) Gate charge at Vth 1 nC Qoss Output charge VDS = 50 V, VGS = 0 V 12.3 nC td(on) Turn on delay time VDS = 50 V, VGS = 10 V, IDS = 5 A, RG = 0 Ω 5 ns tr Rise time 3 ns td(off) Turn off delay time 7 ns tf Fall time 2 ns DIODE CHARACTERISTICS VSD Diode forward voltage ISD = 5 A, VGS = 0 V 0.85 1 V Qrr Reverse recovery charge VDS= 50 V, IF = 5 A, di/dt = 300 A/ μs 94 nC trr Reverse recovery time 32 ns (1) RθJC is determined with the device mounted on a 1-in 2 (6.45-cm2), 2-oz (0.071-mm) thick Cu pad on a 1.5-in × 1.5-in (3.81-cm × 3.81- cm), 0.06-in (1.52-mm) thick FR4 PCB. RθJC is specified by design, whereas RθJA is determined by the user’s board design. (2) Device mounted on FR4 material with 1-in2 (6.45-cm2), 2-oz (0.071-mm) thick Cu. 5.2 Thermal Information TA = 25°C (unless otherwise stated) THERMAL METRIC MIN TYP MAX UNIT RθJC Junction-to-case thermal resistance (1) 5.5 °C/W RθJA Junction-to-ambient thermal resistance(1)(2) 55 °C/W |
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Descrição semelhante - CSD19538Q3AT |
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