Os motores de busca de Datasheet de Componentes eletrônicos
  Portuguese  ▼
ALLDATASHEETPT.COM

X  

CSD19538Q3AT Folha de dados(PDF) 3 Page - Texas Instruments

Click here to check the latest version.
Nome de Peças CSD19538Q3AT
Descrição Electrónicos  100 V N-Channel NexFET Power MOSFET
Download  13 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricante Electrônico  TI1 [Texas Instruments]
Página de início  http://www.ti.com
Logo TI1 - Texas Instruments

CSD19538Q3AT Folha de dados(HTML) 3 Page - Texas Instruments

  CSD19538Q3AT Datasheet HTML 1Page - Texas Instruments CSD19538Q3AT Datasheet HTML 2Page - Texas Instruments CSD19538Q3AT Datasheet HTML 3Page - Texas Instruments CSD19538Q3AT Datasheet HTML 4Page - Texas Instruments CSD19538Q3AT Datasheet HTML 5Page - Texas Instruments CSD19538Q3AT Datasheet HTML 6Page - Texas Instruments CSD19538Q3AT Datasheet HTML 7Page - Texas Instruments CSD19538Q3AT Datasheet HTML 8Page - Texas Instruments CSD19538Q3AT Datasheet HTML 9Page - Texas Instruments Next Button
Zoom Inzoom in Zoom Outzoom out
 3 / 13 page
background image
3
CSD19538Q3A
www.ti.com
SLPS583 – MAY 2016
Product Folder Links: CSD19538Q3A
Submit Documentation Feedback
Copyright © 2016, Texas Instruments Incorporated
5 Specifications
5.1 Electrical Characteristics
TA = 25°C
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
STATIC CHARACTERISTICS
BVDSS
Drain-to-source voltage
VGS = 0 V, ID = 250 μA
100
V
IDSS
Drain-to-source leakage current
VGS = 0 V, VDS = 80 V
1
μA
IGSS
Gate-to-source leakage current
VDS = 0 V, VGS = 20 V
100
nA
VGS(th)
Gate-to-source threshold voltage
VDS = VGS, ID = 250 μA
2.8
3.2
3.8
V
RDS(on)
Drain-to-source on-resistance
VGS = 6 V, ID = 5 A
58
72
m
VGS = 10 V, ID = 5 A
49
59
m
gfs
Transconductance
VDS = 10 V, ID = 5 A
6.1
S
DYNAMIC CHARACTERISTICS
Ciss
Input capacitance
VGS = 0 V, VDS = 50 V, ƒ = 1 MHz
349
454
pF
Coss
Output capacitance
69
90
pF
Crss
Reverse transfer capacitance
12.6
16.4
pF
RG
Series gate resistance
4.6
9.2
Qg
Gate charge total (10 V)
VDS = 50 V, ID = 5 A
4.3
nC
Qgd
Gate charge gate to drain
0.8
nC
Qgs
Gate charge gate to source
1.6
nC
Qg(th)
Gate charge at Vth
1
nC
Qoss
Output charge
VDS = 50 V, VGS = 0 V
12.3
nC
td(on)
Turn on delay time
VDS = 50 V, VGS = 10 V,
IDS = 5 A, RG = 0 Ω
5
ns
tr
Rise time
3
ns
td(off)
Turn off delay time
7
ns
tf
Fall time
2
ns
DIODE CHARACTERISTICS
VSD
Diode forward voltage
ISD = 5 A, VGS = 0 V
0.85
1
V
Qrr
Reverse recovery charge
VDS= 50 V, IF = 5 A,
di/dt = 300 A/
μs
94
nC
trr
Reverse recovery time
32
ns
(1)
RθJC is determined with the device mounted on a 1-in
2 (6.45-cm2), 2-oz (0.071-mm) thick Cu pad on a 1.5-in × 1.5-in (3.81-cm × 3.81-
cm), 0.06-in (1.52-mm) thick FR4 PCB. RθJC is specified by design, whereas RθJA is determined by the user’s board design.
(2)
Device mounted on FR4 material with 1-in2 (6.45-cm2), 2-oz (0.071-mm) thick Cu.
5.2 Thermal Information
TA = 25°C (unless otherwise stated)
THERMAL METRIC
MIN
TYP
MAX
UNIT
RθJC
Junction-to-case thermal resistance (1)
5.5
°C/W
RθJA
Junction-to-ambient thermal resistance(1)(2)
55
°C/W


Nº de peça semelhante - CSD19538Q3AT

Fabricante ElectrônicoNome de PeçasFolha de dadosDescrição Electrónicos
logo
Texas Instruments
CSD19538Q2 TI1-CSD19538Q2 Datasheet
402Kb / 14P
[Old version datasheet]   100V N-Channel NexFET Power MOSFET
CSD19538Q2T TI1-CSD19538Q2T Datasheet
402Kb / 14P
[Old version datasheet]   100V N-Channel NexFET Power MOSFET
More results

Descrição semelhante - CSD19538Q3AT

Fabricante ElectrônicoNome de PeçasFolha de dadosDescrição Electrónicos
logo
Texas Instruments
CSD19532Q5B TI1-CSD19532Q5B Datasheet
1Mb / 13P
[Old version datasheet]   100 V N-Channel NexFET Power MOSFET
CSD19532Q5B TI1-CSD19532Q5B Datasheet
1Mb / 13P
[Old version datasheet]   100 V N-Channel NexFET??Power MOSFET
CSD19536KCS TI1-CSD19536KCS Datasheet
467Kb / 10P
[Old version datasheet]   CSD19536KCS, 100 V N-Channel NexFET Power MOSFET
CSD19536KTT TI-CSD19536KTT_15 Datasheet
852Kb / 14P
[Old version datasheet]   CSD19536KTT 100 V N-Channel NexFET Power MOSFET
CSD19537Q3 TI-CSD19537Q3_15 Datasheet
478Kb / 13P
[Old version datasheet]   CSD19537Q3 100 V N-Channel NexFET Power MOSFET
CSD19534KCS TI-CSD19534KCS_15 Datasheet
300Kb / 12P
[Old version datasheet]   CSD19534KCS 100 V N-Channel NexFET Power MOSFET
CSD19535KCS TI1-CSD19535KCS Datasheet
804Kb / 10P
[Old version datasheet]   CSD19535KCS, 100 V N-Channel NexFET Power MOSFET
CSD19533Q5A TI1-CSD19533Q5A Datasheet
1Mb / 13P
[Old version datasheet]   100 V N-Channel NexFET Power MOSFETs
CSD19533KCS TI1-CSD19533KCS Datasheet
768Kb / 10P
[Old version datasheet]   100 V N-Channel NexFET Power MOSFETs
CSD18511KTT TI1-CSD18511KTT Datasheet
377Kb / 11P
[Old version datasheet]   40-V N-Channel NexFET Power MOSFET
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13


Folha de dados Download

Go To PDF Page


Ligação URL




Privacy Policy
ALLDATASHEETPT.COM
ALLDATASHEET é útil para você?  [ DONATE ] 

Sobre Alldatasheet   |   Publicidade   |   Contato conosco   |   Privacy Policy   |   roca de Link   |   Lista de Fabricantes
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com