0

15

30

45

60

75

90

105

120

135

150

0

1

2

3

4

5

6

− V

G001

0

0.5

1

1.5

2

2.5

3

3.5

4

4.5

0

0.5

1

1.5

2

2.5

3

G001

P0097-01

D

D

G

S

Product

Folder

Sample &

Buy

Technical

Documents

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Software

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Community

CSD23202W10

SLPS506 – AUGUST 2014

CSD23202W10 12-V P-Channel NexFET™ Power MOSFET

1 Features

Product Summary

1

•

TYPICAL VALUE

UNIT

•

Small Footprint 1 mm × 1 mm

Drain-to-Source Voltage

–12

V

•

Low Profile 0.62-mm Height

Gate Charge Total (–4.5 V)

2.9

nC

Gate Charge Gate-to-Drain

0.28

nC

•

Pb Free

82

m

Ω

•

Gate ESD Protection – 3 kV

67

m

Ω

Drain-to-Source On-

•

RoHS Compliant

Resistance

54

m

Ω

•

Halogen Free

44

m

Ω

Threshold Voltage

–0.60

V

2 Applications

•

Battery Management

Ordering Information(1)

•

Load Switch

Device

Qty

Media

Package

Ship

CSD23202W10

3000

7-Inch Reel

•

Battery Protection

1 × 1-mm Wafer

Tape and

Level Package

Reel

CSD23202W10T

250

7-Inch Reel

3 Description

(1) For all available packages, see the orderable addendum at

the end of the data sheet.

This 12 V, 44 m

Ω device is designed to deliver the

lowest on-resistance and gate charge in a small

Absolute Maximum Ratings

1 mm × 1 mm outline with excellent thermal

characteristics in an ultra-low profile.

VALUE

UNIT

Drain-to-Source Voltage

–12

V

.

Gate-to-Source Voltage

–6

V

Continuous Drain Current(1)

–2.2

A

Top View

Pulsed Drain Current(2)

–25

A

Continuous Gate Clamp Current

–0.5

A

Pulsed Gate Clamp Current

–7

A

Power Dissipation(1)

1

W

Operating Junction and

–55 to 150

°C

Storage Temperature Range

(1) Device operating at a temperature of 105°C

.

.

.

.

Gate Charge

1

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,

intellectual property matters and other important disclaimers. PRODUCTION DATA.