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LF198WG-QMLV Folha de dados(PDF) 2 Page - Texas Instruments |
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LF198WG-QMLV Folha de dados(HTML) 2 Page - Texas Instruments |
2 / 22 page LF198QML SNOSAH9A – FEBRUARY 2005 – REVISED MARCH 2013 www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. Typical Connection and Performance Curve Figure 3. Figure 4. Acquisition Time Functional Diagram 2 Submit Documentation Feedback Copyright © 2005–2013, Texas Instruments Incorporated Product Folder Links: LF198QML |
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Descrição semelhante - LF198WG-QMLV |
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