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LM193MDE Folha de dados(PDF) 6 Page - Texas Instruments |
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LM193MDE Folha de dados(HTML) 6 Page - Texas Instruments |
6 / 22 page LM193A, LM193QML SNOSAM2C – MAY 2005 – REVISED MARCH 2013 www.ti.com LM193A Electrical Characteristics AC Parameters The following conditions apply, unless otherwise specified. +V = 5V, VCM = 0V Symbol Parameter Conditions Sub- Notes Min Max Unit groups tRLH Response Time VOD = 5mV 5.0 µS 9 VOD = 50mV 0.8 µS 9 tRHL Response Time VOD = 5mV 2.5 µS 9 VOD = 50mV 0.8 µS 9 LM193A Electrical Characteristics DC Drift Parameters The following conditions apply, unless otherwise specified. +V = 5V, VCM = 0V Delta calculations performed on QMLV devices at Group B, Subgroup 5 only Symbol Parameter Conditions Sub- Notes Min Max Unit groups VIO Input Offset Voltage +V = 30V -1.0 1.0 mV 1 ±IIB Input Bias Current -15 15 nA 1 LM193A - 100K Radiation Electrical Characteristics DC Parameters (1) (2) The following conditions apply, unless otherwise specified. +V = 5V, VCM = 0V Symbol Parameter Conditions Sub- Notes Min Max Unit groups ICC Supply Current RL = Infinity 1.0 mA 1, 2, 3 +V = 36V, RL = Infinity 2.5 mA 1, 2, 3 ICEX Output Leakage Current +V = 30V, +VI = 1V, -0.65 0.65 µA 1 VO = 30, -VI = 0 -1.0 1.0 µA 2, 3 ISink Output Sink Current VO = 1.5V, -VI = 1V, 6.0 mA 1 +VI = 0V 4.0 mA 2, 3 VSat Output Saturation Voltage ISink = 4mA, 0.4 V 1 -VI = 1V, +VI = 0V 0.7 V 2, 3 VIO Input Offset Voltage -2.0 2.0 mV 1 -4.0 4.0 mV 2, 3 +V = 30V -2.0 2.0 mV 1 -4.0 4.0 mV 2, 3 +V = 30V, VCM = 28.5V -2.0 2.0 mV 1 +V = 30V, VCM = 28.0V -4.0 4.0 mV 2, 3 ±IIB Input Bias Current VO = 1.5V -100 -1.0 nA 1 -300 -1.0 nA 2, 3 IIO Input offset Current RS = 50Ω, VO = 1.5V -25 25 nA 1 -100 100 nA 2, 3 VCM Common Mode Voltage +V = 30V See(3) 28.5 V 1 See(3) 28 V 2, 3 PSRR Power Supply Rejection Ratio +V = 5V to 30V, 60 dB 1 RS = 50Ω CMRR Common Mode Rejection Ratio +V = 30V, RS = 50Ω 60 dB 1 VCM = 0V to 28.5V, (1) Pre and post irradiation limits are identical to those listed under AC and DC electrical characteristics except as listed in the Post Radiation Limits Table. These parts may be dose rate sensitive in a space environment and demonstrate enhanced low dose rate effect. Radiation end point limits for the noted parameters are specified only for the conditions as specified in MIL-STD-883, Method 1019 (2) Low dose rate testing has been performed on a wafer-by-wafer basis, per test method 1019 condition D of MIL-STD-883, with no enhanced low dose rate sensitivity (ELDRS) effect. (3) Parameter specified by the VIO tests. 6 Submit Documentation Feedback Copyright © 2005–2013, Texas Instruments Incorporated Product Folder Links: LM193A LM193QML |
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Descrição semelhante - LM193MDE |
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