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74F632QC Folha de dados(PDF) 10 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
Nome de Peças 74F632QC
Descrição Electrónicos  32-Bit Parallel Error Detection and Correction Circuit
Download  14 Pages
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Fabricante Electrônico  NSC [National Semiconductor (TI)]
Página de início  http://www.national.com
Logo NSC - National Semiconductor (TI)

74F632QC Folha de dados(HTML) 10 Page - National Semiconductor (TI)

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Absolute Maximum Ratings (Note 1)
If MilitaryAerospace specified devices are required
please contact the National Semiconductor Sales
OfficeDistributors for availability and specifications
Storage Temperature
b
65 Cto a150 C
Ambient Temperature under Bias
b
55 Cto a125 C
Junction Temperature under Bias
b
55 Cto a175 C
VCC Pin Potential to
Ground Pin
b
05V to a70V
Input Voltage (Note 2)
b
05V to a70V
Input Current (Note 2)
b
30 mA to a50 mA
Voltage Applied to Output
in HIGH State (with VCC e 0V)
Standard Output
b
05V to VCC
TRI-STATE Output
b
05V to a55V
Current Applied to Output
in LOW State (Max)
twice the rated IOL (mA)
ESD Last Passing Voltage (Min)
4000V
Note 1
Absolute maximum ratings are values beyond which the device may
be damaged or have its useful life impaired Functional operation under
these conditions is not implied
Note 2
Either voltage limit or current limit is sufficient to protect inputs
Recommended Operating
Conditions
Free Air Ambient Temperature
Military
b
55 Cto a125 C
Commercial
0 Cto a70 C
Supply Voltage
Military
a
45V to a55V
Commercial
a
45V to a55V
DC Electrical Characteristics
Symbol
Parameter
54F74F
Units
VCC
Conditions
Min
Typ
Max
VIH
Input HIGH Voltage
20
V
Recognized as a HIGH Signal
VIL
Input LOW Voltage
08
V
Recognized as a LOW Signal
VCD
Input Clamp Diode Voltage
b
12
V
Min
IIN eb18 mA
VOH
Output HIGH
54F 10% VCC
25
IOH eb1 mA (ERR MERR DBn CBn)
Voltage
54F 10% VCC
24
IOH eb3mA(DBn CBn)
74F 10% VCC
25
V
Min
IOH eb1 mA (ERR MERR DBn CBn)
74F 10% VCC
24
IOH eb3mA(DBn CBn)
74F 5% VCC
27
IOH eb1 mA (ERR MERR DBn CBn)
74F 5% VCC
27
IOH eb3mA(DBn CBn)
VOL
Output LOW
54F 10% VCC
05
IOL e 20 mA (ERR MERR DBn CBn)
Voltage
74F 10% VCC
05
V
Min
IOL e 20 mA (ERR MERR)
74F 10% VCC
05
IOL e 24 mA (DBn CBn)
IIH
Input HIGH
54F
200
m
A
Max
VIN e 27V (S0 S1 OEBn OECB LEDBO)
Current
74F
50
IBVI
Input HIGH Current
54F
100
m
A
Max
VIN e 70V (S0 S1 OEBn OECB LEDBO)
Breakdown Test
74F
70
IBVIT
Input HIGH Current
54F
10
mA
Max
VIN e 55V (CBn DBn)
Breakdown (IO)
74F
05
ICEX
Output HIGH
54F
250
m
A
Max
VOUT e VCC
Leakage Current
74F
50
VID
Input Leakage
74F
475
V
00
IID e 19 mA
Test
All Other Pins Grounded
IOD
Output Leakage
74F
375
m
A
00
VIOD e 150 mV
Circuit Current
All Other Pins Grounded
IIL
Input LOW Current
b
06
mA
Max
VIN e 05V (S0 S1 OEBn OECB LEDBO)
IIH a IOZH Output Leakage Current
70
m
A
Max
VIO e 27V (CBn DBn)
IIL a IOZL
Output Leakage Current
b
650
m
A
Max
VIO e 05V (CBn DBn)
IOZH
Output Leakage Current
70
m
A
Max
VIO e 27V (CBn DBn)
IOZL
Output Leakage Current
b
650
m
A
Max
VIO e 05V (CBn DBn)
IOS
Output Short-Circuit Current
b
60
b
150
mA
Max
VOUT e 0V
IZZ
Bus Drainage Test
500
m
A
00V
VOUT e 525V (CBn DBn)
ICC
Power Supply Current
340
mA
Max
TA e 0 C–25 C
ICC
Power Supply Current
325
mA
Max
TA e 25 C–70 C
10


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