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T1235H Folha de dados(PDF) 5 Page - STMicroelectronics |
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T1235H Folha de dados(HTML) 5 Page - STMicroelectronics |
5 / 7 page T1235H Series 5/7 Fig. 10: Leakage current versus junction temperature for different values of blocking voltage (typical values). Fig. 11: Acceptable repetitive peak off-state voltage versus case-ambient thermal resistance. Fig. 12: D²PAK Thermal resistance junction to ambient versus copper surface under tab (printed circuit board FR4, copper thickness: 35 µm). 50 75 100 125 150 1E-3 1E-2 1E-1 1E+0 1E+1 Tj(°C) IDRM/IRRM(mA) VD=VR=600V VD=VR=400V VD=VR=200V 0 2 4 6 8 10 12 14 16 18 20 0 100 200 300 400 500 600 700 Rth(c-a)(°C/W) VDRM/VRRM(V) Tj=150°C Rth(j-c)=1.2°C/W 0 4 8 1216202428 323640 0 10 20 30 40 50 60 70 80 S(cm²) Rth(j-a) (°C/W) D²PAK |
Nº de peça semelhante - T1235H |
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Descrição semelhante - T1235H |
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