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MTBA6C12H8-0-T6-G Folha de dados(PDF) 5 Page - Cystech Electonics Corp. |
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MTBA6C12H8-0-T6-G Folha de dados(HTML) 5 Page - Cystech Electonics Corp. |
5 / 13 page CYStech Electronics Corp. Spec. No. : C973H8 Issued Date : 2016.07.06 Revised Date : Page No. : 5/13 MTBA6C12H8 CYStek Product Specification Typical Characteristics(Cont.) : Q1( N-channel) Capacitance vs Drain-to-Source Voltage 10 100 1000 0 10 20 30 40 50 60 VDS, Drain-Source Voltage(V) Coss Ciss Crss Threshold Voltage vs Junction Tempearture 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) ID=250 μA ID=1mA Forward Transfer Admittance vs Drain Current 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 ID, Drain Current(A) VDS=10V Pulsed Ta=25°C Gate Charge Characteristics 0 2 4 6 8 10 0 2 4 6 8 10 Qg, Total Gate Charge(nC) ID=2A VDS=96V VDS=60V Maximum Safe Operating Area 0.01 0.1 1 10 100 0.1 1 10 100 1000 VDS, Drain-Source Voltage(V) DC 10ms 1ms 100 μs RDS(ON) Limited TA=25°C, Tj=150°C, VGS=10V RθJA=50°C/W,Single Pulse 1s 100ms Maximum Drain Current vs Junction Temperature 0 0.5 1 1.5 2 2.5 3 25 50 75 100 125 150 175 TJ, Junction Temperature(°C) TA=25°C, Tj(max)=150°C,VGS=10V RθJA=50°C/W |
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Descrição semelhante - MTBA6C12H8-0-T6-G |
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