SI4810DY datasheet(2/5 Pages) VISHAY

Nome de Peças	SI4810DY

Descrição Electrónicos	N-Channel 30-V (D-S) MOSFET with Schottky Diode

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Fabricante Electrônico	VISHAY [Vishay Siliconix]

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Si4810DY

Vishay Siliconix

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Document Number: 70802

S-31062—Rev. F, 26-May-03

MOSFET + SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 mA

1

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "20 V

"100

nA

VDS = 30 V, VGS = 0 V

0.007

0.100

Zero Gate Voltage Drain Current

(MOSFET + Schottky)

IDSS

VDS = 30 V, VGS = 0 V, TJ = 100_C

1.5

10

mA

(MOSFET + Schottky)

DSS

VDS = 30 V, VGS = 0 V, TJ = 125_C

6.5

20

On-State Drain Currenta

ID(on)

VDS w 5 V, VGS = 10 V

20

A

Drain Source On State Resistancea

r

VGS = 10 V, ID = 10 A

0.0105

0.0135

W

Drain-Source On-State Resistancea

rDS(on)

VGS = 4.5 V, ID = 5 A

0.0155

0.020

W

Forward Transconductancea

gfs

VDS = 15 V, ID = 10 A

28

S

Schottky Diode Forward Voltagea

VSD

IS = 3.0 A, VGS = 0 V

0.485

0.53

V

Schottky Diode Forward Voltagea

VSD

IS = 3.0 A, VGS = 0 V, TJ = 125_C

0.420

0.47

V

Dynamicb

Total Gate Charge

Qg

20

30

Gate-Source Charge

Qgs

VDS = 15 V, VGS = 5 V, ID = 10 A

8

nC

Gate-Drain Charge

Qgd

7

Gate Resistance

Rg

0.5

1.0

1.6

W

Turn-On Delay Time

td(on)

15

30

Rise Time

tr

VDD = 15 V, RL = 15 W

8

15

Turn-Off Delay Time

td(off)

VDD = 15 V, RL = 15 W

ID ^ 1 A, VGEN = 10 V, RG = 6 W

45

90

ns

Fall Time

tf

18

40

Source-Drain Reverse Recovery Time

trr

IF = 3.0 A, di/dt = 100 A/ms

36

70

Notes

a.

Pulse test; pulse width

v 300 ms, duty cycle v 2%.

b.

Guaranteed by design, not subject to production testing.

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