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Os motores de busca de Datasheet de Componentes eletrônicos |
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Os motores de busca de Datasheet de Componentes eletrônicos |
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1N4448W Folha de dados(PDF) 2 Page - Diode Semiconductor Korea |
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1N4448W Folha de dados(HTML) 2 Page - Diode Semiconductor Korea |
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2 / 3 page  Fast switching Diode 1N4448W ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Characteristic Symbol Min Max Unit Test Condition Reverse Breakdown Voltage V(BR)R 75 - V IR=10μA Forward Voltage VF1 VF2 VF3 VF4 - 0.72 0.855 1.0 1.25 V IF=5mA IF=10mA IF=100mA IF=150mA Reverse Current IR1 IR2 - 2.5 25 μA nA VR=75V VR=20V Capacitance between terminals CT - 4.0 pF VR=0,f=1.0MHz Reverse Recovery Time trr - 4.0 ns IF=IR=10mA, Irr=0.1×IR,RL=100Ω TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified www.diode.kr Diode Semiconductor Korea |
Nº de peça semelhante - 1N4448W |
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Descrição semelhante - 1N4448W |
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