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FQPF6N40C Folha de dados(PDF) 1 Page - Fairchild Semiconductor

Nome de Peças FQPF6N40C
Descrição Electrónicos  400V N-Channel MOSFET
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Fabricante Electrônico  FAIRCHILD [Fairchild Semiconductor]
Página de início  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FQPF6N40C Folha de dados(HTML) 1 Page - Fairchild Semiconductor

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©2003 Fairchild Semiconductor Corporation
Rev. A, May 2003
QFETTM
FQP6N40C/FQPF6N40C
400V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
electronic lamp ballasts based on half bridge topology.
Features
6A, 400V, RDS(on) = 1.0 Ω @VGS = 10 V
• Low gate charge ( typical 16nC)
• Low Crss ( typical 15pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Absolute Maximum Ratings T
C = 25°C unless otherwise noted
* Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
FQP6N40C
FQPF6N40C
Units
VDSS
Drain-Source Voltage
400
V
ID
Drain Current
- Continuous (TC = 25°C)
66 *
A
- Continuous (TC = 100°C)
3.6
3.6 *
A
IDM
Drain Current
- Pulsed
(Note 1)
24
24 *
A
VGSS
Gate-Source Voltage
± 30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
270
mJ
IAR
Avalanche Current
(Note 1)
6A
EAR
Repetitive Avalanche Energy
(Note 1)
7.3
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
PD
Power Dissipation (TC = 25°C)
73
38
W
- Derate above 25°C
0.58
0.3
W/°C
TJ, TSTG
Operating and Storage Temperature Range
-55 to +150
°C
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C
Symbol
Parameter
FQP6N40C
FQPF6N40C
Units
RθJC
Thermal Resistance, Junction-to-Case
1.71
3.31
°C/W
RθCS
Thermal Resistance, Case-to-Sink Typ.
0.5
--
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
62.5
62.5
°C/W
TO-220
FQP Series
G
S
D
TO-220F
FQPF Series
G
S
D
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