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AM14N65P Folha de dados(PDF) 1 Page - Analog Power |
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AM14N65P Folha de dados(HTML) 1 Page - Analog Power |
1 / 5 page Analog Power AM14N65P N-Channel 650-V (D-S) MOSFET VDS (V) ID (A) 650 14 a Symbol Limit Units VDS 650 VGS ±30 Continuous Drain Current a TC=25°C ID 14 IDM 60 TC=25°C IS 14 A Power Dissipation a TC=25°C PD 300 W TJ, Tstg -55 to 175 °C Symbol Maximum Units RθJA 62.5 RθJC 0.5 Notes a. Package Limited b. Pulse width limited by maximum junction temperature c. Surface Mounted on 1” x 1” FR4 Board. Pulsed Drain Current b THERMAL RESISTANCE RATINGS °C/W Parameter Operating Junction and Storage Temperature Range ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) V Parameter Drain-Source Voltage PRODUCT SUMMARY rDS(on) (mΩ) 650 @ VGS = 10V A Maximum Junction-to-Ambient c Maximum Junction-to-Case Continuous Source Current (Diode Conduction) a Gate-Source Voltage Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • Power Supplies • Motor Drives • Consumer Electronics DRAIN connected to TAB © Preliminary 1 Publication Order Number: DS_AM14N65P_1A |
Nº de peça semelhante - AM14N65P |
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Descrição semelhante - AM14N65P |
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