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IRLML6402 Folha de dados(PDF) 1 Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.

Nome de Peças IRLML6402
Descrição Electrónicos  Plastic-Encapsulate Mosfets
Download  4 Pages
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Fabricante Electrônico  HOTTECH [GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.]
Página de início  http://www.hottech.net.cn/
Logo HOTTECH - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.

IRLML6402 Folha de dados(HTML) 1 Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.

  IRLML6402 Datasheet HTML 1Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD. IRLML6402 Datasheet HTML 2Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD. IRLML6402 Datasheet HTML 3Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD. IRLML6402 Datasheet HTML 4Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.  
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Parameter
Typ.
Max.
Units
RθJA
Maximum Junction-to-Ambient
ƒ
75
100
°C/W
Power MOSFET
Thermal Resistance
VDSS = -20V
RDS(on) = 0.065Ω
l Ultra Low On-Resistance
l P-Channel MOSFET
l SOT-23 Footprint
l Low Profile (<1.1mm)
l Available in Tape and Reel
l Fast Switching
l Lead-Free
l Halogen-Free
S
D
G
Parameter
Max.
Units
VDS
Drain- Source Voltage
-20
V
ID @ TA = 25°C
Continuous Drain Current, VGS @ -4.5V
-3.7
ID @ TA= 70°C
Continuous Drain Current, VGS @ -4.5V
-2.2
A
IDM
Pulsed Drain Current

-22
PD @TA = 25°C
Power Dissipation
1.3
PD @TA = 70°C
Power Dissipation
0.8
Linear Derating Factor
0.01
W/°C
EAS
Single Pulse Avalanche Energy
„
11
mJ
VGS
Gate-to-Source Voltage
± 12
V
TJ, TSTG
Junction and Storage Temperature Range
-55 to + 150
°C
Absolute Maximum Ratings
W
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
-20
––– –––
V
VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– -0.009 –––
V/°C Reference to 25°C, ID = -1mA
‚
––– 0.050 0.065
VGS = -4.5V, ID = -3.7A
‚
––– 0.080 0.135
VGS = -2.5V, ID = -3.1A
‚
VGS(th)
Gate Threshold Voltage
-0.40 -0.55 -1.2
V
VDS = VGS, ID = -250µA
gfs
Forward Transconductance
6.0
––– –––
S
VDS = -10V, ID = -3.7A
‚
–––
––– -1.0
VDS = -20V, VGS = 0V
–––
–––
-25
VDS = -20V, VGS = 0V, TJ = 70°C
Gate-to-Source Forward Leakage
–––
––– -100
VGS = -12V
Gate-to-Source Reverse Leakage
–––
––– 100
VGS = 12V
Qg
Total Gate Charge
–––
8.0
12
ID = -3.7A
Qgs
Gate-to-Source Charge
–––
1.2
1.8
nC
VDS = -10V
Qgd
Gate-to-Drain ("Miller") Charge
–––
2.8
4.2
VGS = -5.0V
‚
td(on)
Turn-On Delay Time
–––
350 –––
VDD = -10V
tr
Rise Time
–––
48
–––
ID = -3.7A
td(off)
Turn-Off Delay Time
–––
588 –––
RG = 89Ω
tf
Fall Time
–––
381 –––
RD = 2.7Ω
Ciss
Input Capacitance
–––
633 –––
VGS = 0V
Coss
Output Capacitance
–––
145 –––
pF
VDS = -10V
Crss
Reverse Transfer Capacitance
–––
110 –––
ƒ = 1.0MHz
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IGSS
µA
RDS(on)
Static Drain-to-Source On-Resistance
IDSS
Drain-to-Source Leakage Current
nA
ns
Page:P4 -P1
Plastic-Encapsulate Mosfets
IRLML6402
GUANGDONG
HOTTECH
INDUSTRIAL
CO., LTD.
Marking: 1E
l


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