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IRLML6402 Folha de dados(PDF) 1 Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD. |
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IRLML6402 Folha de dados(HTML) 1 Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD. |
1 / 4 page Parameter Typ. Max. Units RθJA Maximum Junction-to-Ambient 75 100 °C/W Power MOSFET Thermal Resistance VDSS = -20V RDS(on) = 0.065Ω l Ultra Low On-Resistance l P-Channel MOSFET l SOT-23 Footprint l Low Profile (<1.1mm) l Available in Tape and Reel l Fast Switching l Lead-Free l Halogen-Free S D G Parameter Max. Units VDS Drain- Source Voltage -20 V ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V -3.7 ID @ TA= 70°C Continuous Drain Current, VGS @ -4.5V -2.2 A IDM Pulsed Drain Current -22 PD @TA = 25°C Power Dissipation 1.3 PD @TA = 70°C Power Dissipation 0.8 Linear Derating Factor 0.01 W/°C EAS Single Pulse Avalanche Energy 11 mJ VGS Gate-to-Source Voltage ± 12 V TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C Absolute Maximum Ratings W Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage -20 ––– ––– V VGS = 0V, ID = -250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.009 ––– V/°C Reference to 25°C, ID = -1mA ––– 0.050 0.065 VGS = -4.5V, ID = -3.7A ––– 0.080 0.135 VGS = -2.5V, ID = -3.1A VGS(th) Gate Threshold Voltage -0.40 -0.55 -1.2 V VDS = VGS, ID = -250µA gfs Forward Transconductance 6.0 ––– ––– S VDS = -10V, ID = -3.7A ––– ––– -1.0 VDS = -20V, VGS = 0V ––– ––– -25 VDS = -20V, VGS = 0V, TJ = 70°C Gate-to-Source Forward Leakage ––– ––– -100 VGS = -12V Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 12V Qg Total Gate Charge ––– 8.0 12 ID = -3.7A Qgs Gate-to-Source Charge ––– 1.2 1.8 nC VDS = -10V Qgd Gate-to-Drain ("Miller") Charge ––– 2.8 4.2 VGS = -5.0V td(on) Turn-On Delay Time ––– 350 ––– VDD = -10V tr Rise Time ––– 48 ––– ID = -3.7A td(off) Turn-Off Delay Time ––– 588 ––– RG = 89Ω tf Fall Time ––– 381 ––– RD = 2.7Ω Ciss Input Capacitance ––– 633 ––– VGS = 0V Coss Output Capacitance ––– 145 ––– pF VDS = -10V Crss Reverse Transfer Capacitance ––– 110 ––– ƒ = 1.0MHz Electrical Characteristics @ TJ = 25°C (unless otherwise specified) IGSS µA Ω RDS(on) Static Drain-to-Source On-Resistance IDSS Drain-to-Source Leakage Current nA ns Page:P4 -P1 Plastic-Encapsulate Mosfets IRLML6402 GUANGDONG HOTTECH INDUSTRIAL CO., LTD. Marking: 1E l |
Nº de peça semelhante - IRLML6402 |
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Descrição semelhante - IRLML6402 |
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