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2SA1069-Z Folha de dados(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SA1069-Z Folha de dados(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon PNP Power Transistor 2SA1069-Z DESCRIPTION · Low Collector Saturation Voltage · Fast Switching Speed · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for high-speed switching, and is ideal for use as a driver in devices such as switching regulators,DC/DC converters, and high frequency power amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -12 V IC Collector Current-Continuous -5 A ICM Collector Current-Peak -10 A IB Base Current-Continuous -2.5 A PC Collector Power Dissipation @ Ta=25℃ 1.5 W Total Power Dissipation @ TC=25℃ 30 TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
Nº de peça semelhante - 2SA1069-Z |
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Descrição semelhante - 2SA1069-Z |
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