BC808-40 datasheet(1/2 Pages) HOTTECH

Nome de Peças	BC808-40

Descrição Electrónicos	Plastic-Encapsulate Transistors

Download	2 Pages

Scroll/Zoom	100%

Fabricante Electrônico	HOTTECH [GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.]

Página de início	http://www.hottech.net.cn/

Logo

1 / 2 page

Page:P2-P1

Plastic-Encapsulate Transistors

GUANGDONG

HOTTECH

INDUSTRIAL

CO,. LTD.

FEATURES

Suitable for AF-Driver stages and low power output stages

Complement to BC818

BC808-16

BC808-25

BC808-40

5E

5F

5G

MAXIMUM RATINGS (TA=25

unless otherwise noted)

Parameter

Symbol

Value

Unit

Collector-Base Voltage

V

CBO

-30

V

DCollector-Emitter Voltage

V

CEO

-25

V

Emitter-Base Voltage

V

EBO

-5

V

Collector Current -Continuous

I

C

800

mA

Collector Power Dissipation

PC

300

mW

Junction Temperature

T

J

150

Storage Temperature

Tstg

-55 to +150

ELECTRICAL CHARACTERISTICS (Tamb=25

unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

VCBO

IC=-100μA, IE=0

-30

V

Collector-emitter breakdown voltage

VCEO

IC=-10mA, IB=0

-25

V

Emitter-base breakdown voltage

VEBO

IE=-100μA, IC=0

-5

V

Collector cut-off current

ICBO

VCB=-25V, IE=0

-0.1

μA

Emitter cut-off current

IEBO

VEB=-4V, IC=0

-0.1

μA

DC current gain

hFE(1)

VCE=-1V, IC=-100mA

100

630

hFE(2)

VCE=-1V, IC=-300mA

60

Collector-emitter saturation voltage

VCE(sat)

IC=-500mA, IB=-50mA

-0.7

V

Base-emitter voltage

VBE

VCE=-1V, IC=-300mA

-1.2

V

Transition frequency

fT

VCE=-5V, IC=-10mA, f=50MHz

100

MHz

Collector output capacitance

Cob

VCB=-10V, IE=0, f=1MHz

12

pF

CLASSIFICATION OF

hFE

Rank

5E

5F

5G

Range

100-250

160-400

250-630

(PNP)

1. BASE

2. EMITTER

SOT-23

3. COLLECTO

BC808-16

BC808-25

BC808-40

Nº de peça semelhante - BC808-40

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Siemens Semiconductor G...	BC808-40	131Kb / 5P	PNP Silicon AF Transistors (For general AF applications High collector current High current gain)
Micro Commercial Compon...	BC808-40	317Kb / 3P	PNP Silicon General Purpose Transistors
Fairchild Semiconductor	BC808-40	72Kb / 6P	Switching and Amplifier Applications
Shenzhen Luguang Electr...	BC808-40	1Mb / 2P	PNP General Purpose Amplifier
Infineon Technologies A...	BC808-40	47Kb / 5P	PNP Silicon AF Transistors Nov-29-2001

More results

Descrição semelhante - BC808-40

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
List of Unclassifed Man...	S9013	963Kb / 2P	PLASTIC ENCAPSULATE TRANSISTORS
GUANGDONG HOTTECH INDUS...	2SC4672	175Kb / 2P	Plastic-Encapsulate Transistors
	2SB1260	173Kb / 2P	Plastic-Encapsulate Transistors
	A44	304Kb / 2P	Plastic-Encapsulate Transistors
	BAS21	274Kb / 2P	Plastic-Encapsulate Transistors
	2SA812	306Kb / 2P	Plastic-Encapsulate Transistors
	MMBT5401	191Kb / 2P	Plastic-Encapsulate Transistors
	MMBTA05	274Kb / 2P	Plastic-Encapsulate Transistors
	2SC4115	1Mb / 2P	Plastic-Encapsulate Transistors
	MMST2907A	202Kb / 2P	Plastic-Encapsulate Transistors
	MMST3906	339Kb / 2P	Plastic-Encapsulate Transistors

More results

BC808-40 Folha de dados(PDF) 1 Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.

BC808-40 Folha de dados(HTML) 1 Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.

Nº de peça semelhante - BC808-40

Descrição semelhante - BC808-40

Html Pages

1 2

Folha de dados Download

Ligação URL