CSD16327Q3_16 datasheet(1/13 Pages) TI1

Nome de Peças	CSD16327Q3

Descrição Electrónicos	25-V N-Channel NexFET Power MOSFET

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VGS - Gate-to-Source Voltage (V)

0

1

2

3

4

5

6

7

8

9

10

0

2

4

6

8

10

12

14

16

D007

TC = 25qC, ID = 24 A

TC = 125qC, ID = 24 A

Qg - Gate Charge (nC)

0

2

4

6

8

10

12

0

1

2

3

4

5

6

7

8

D004

ID = 24 A

VDS = 12.5 V

1

D

2

D

3

D

4

D

5

G

6

S

7

S

8

S

P0095-01

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An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,

intellectual property matters and other important disclaimers. PRODUCTION DATA.

CSD16327Q3

SLPS371A – DECEMBER 2011 – REVISED SEPTEMBER 2016

CSD16327Q3 25-V N-Channel NexFET™ Power MOSFET

1

1 Features

1

•

Optimized for 5-V Gate Drive

•

Ultra-Low Qg and Qgd

•

Low Thermal Resistance

•

Avalanche Rated

•

Lead-Free Terminal Plating

•

RoHS Compliant

•

Halogen Free

•

SON 3.3-mm × 3.3-mm Plastic Package

2 Applications

•

Point-of-Load Synchronous Buck Converter for

Applications in Networking, Telecom and

Computing Systems

•

Optimized for Control or Synchronous FET

Applications

3 Description

This

25-V,

3.4-m

Ω,

SON

3.3-mm

×

3.3-mm

NexFET™ power MOSFET has been designed to

minimize losses in power conversion and optimized

for 5-V gate drive applications.

Top View

Product Summary

TA = 25°C

TYPICAL VALUE

UNIT

VDS

Drain-to-Source Voltage

25

V

Qg

Gate Charge Total (4.5 V)

6.2

nC

Qgd

Gate Charge Gate-to-Drain

1.1

nC

RDS(on)

Drain-to-Source On-Resistance

VGS = 3 V

5

m

Ω

VGS = 4.5 V

4

VGS = 8 V

3.4

VGS(th)

Threshold Voltage

1.2

V

.

Device Information(1)

DEVICE

MEDIA

QTY

PACKAGE

SHIP

CSD16327Q3

13-Inch Reel

2500

SON

3.30-mm × 3.30-mm

Plastic Package

Tape

and

Reel

CSD16327Q3T

7-Inch Reel

250

(1) For all available packages, see the orderable addendum at

the end of the data sheet.

Absolute Maximum Ratings

TA = 25°C

VALUE

UNIT

VDS

Drain-to-Source Voltage

25

V

VGS

Gate-to-Source Voltage

+10 / –8

V

ID

Continuous Drain Current (Package Limited)

60

A

Continuous Drain Current (Silicon Limited),

TC = 25°C

112

Continuous Drain Current(1)

22

IDM

Pulsed Drain Current(2)

240

A

PD

Power Dissipation(1)

2.8

W

Power Dissipation, TC = 25°C

74

TJ,

Tstg

Operating Junction Temperature,

Storage Temperature

–55 to 150

°C

EAS

Avalanche Energy, Single Pulse

ID = 50 A, L = 0.1 mH, RG = 25 Ω

125

mJ

(1) Typical RθJA = 45°C/W on 1-in

2 Cu (2 oz) on 0.06-in thick FR4

PCB.

(2) Max RθJC = 1.7°C/W pulse width ≤100 μs, duty cycle ≤1%.

RDS(on) vs VGS

Gate Charge

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