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LM113-1H Folha de dados(PDF) 1 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
Nome de Peças LM113-1H
Descrição Electrónicos  Reference Diode
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Fabricante Electrônico  NSC [National Semiconductor (TI)]
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LM113-1H Folha de dados(HTML) 1 Page - National Semiconductor (TI)

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TLH5713
December 1994
LM113LM313 Reference Diode
General Description
The LM113LM313 are temperature compensated low volt-
age reference diodes They feature extremely-tight regula-
tion over a wide range of operating currents in addition to an
unusually-low breakdown voltage and good temperature
stability
The diodes are synthesized using transistors and resistors
in a monolithic integrated circuit As such they have the
same low noise and long term stability as modern IC op
amps Further output voltage of the reference depends only
on highly-predictable properties of components in the IC so
they can be manufactured and supplied to tight tolerances
Features
Y
Low breakdown voltage 1220V
Y
Dynamic impedance of 03X from 500 mAto20mA
Y
Temperature stability typically 1% overb55 Cto125 C
range (LM113) 0 Cto70 C (LM313)
Y
Tight tolerance g5% g2% or g1%
The characteristics of this reference recommend it for use in
bias-regulation circuitry in low-voltage power supplies or in
battery powered equipment The fact that the breakdown
voltage is equal to a physical property of siliconthe ener-
gy-band gap voltagemakes it useful for many tempera-
ture-compensation and temperature-measurement func-
tions
Schematic and Connection Diagrams
Metal Can Package
Order Number
LM113H LM113H883
LM113-1H LM113-1H883
LM113-2H LM113-2H883
or LM313H
See NS Package Number H02A
TLH5713 – 1
Typical Applications
Level Detector for Photodiode
Low Voltage Regulator
Solid tantalum
TLH5713 – 2
C1995 National Semiconductor Corporation
RRD-B30M115Printed in U S A


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