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Os motores de busca de Datasheet de Componentes eletrônicos |
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Os motores de busca de Datasheet de Componentes eletrônicos |
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2N10L-220 Folha de dados(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2N10L-220 Folha de dados(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page  INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.com isc & iscsemi is registered trademark 2 isc N-Channel MOSFET Transistor 2N10L · ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID=250µA 100 V VGS(th) Gate Threshold Voltage VDS= VGS; ID=1mA 2.0 4.0 V VSD Diode Forward On-voltage IS= 2A ;VGS= 0 1.4 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 1A 1.05 Ω IGSS Gate-Body Leakage Current VGS= ±20V;VDS= 0 ± 100 nA IDSS Zero Gate Voltage Drain Current VDS=100V; VGS= 0 10 µA · |
Nº de peça semelhante - 2N10L-220 |
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Descrição semelhante - 2N10L-220 |
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