2N4233A datasheet(2/2 Pages) ISC

Nome de Peças	2N4233A

Descrição Electrónicos	isc Silicon NPN Power Transistor

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isc Silicon NPN Power Transistor

2N4233A

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

VCEO(SUS)*

Collector-Emitter Sustaining Voltage

IC=100mA; IB= 0

60

V

ICEO

Collector Cutoff Current

VCE=80V;IB= 0

1

mA

ICEX

Collector-Emitter Leakage current

VCE=80V,VBE(OFF)=1.5V

0.1

mA

ICBO

Collector Cutoff Current

VCE=80V;IB= 0

50

uA

IEBO

Emitter Cutoff Current

VEB= 5V; IC= 0

0.5

mA

VCE(sat)-1*

Collector-Emitter Saturation Voltage

IC= 1.5A; IB= 0.15A

0.7

V

VCE(sat)-2*

Collector-Emitter Saturation Voltage

IC= 3A; IB= 0.3A

2.0

V

VCE(sat)-3*

Collector-Emitter Saturation Voltage

IC= 5A; IB=1.25A

4

V

VBE(ON)*

Base-Emitter On Voltage

IC=1.5A;VCE= 2V

1.4

V

hFE-1*

DC Current Gain

IC= 0.5A; VCE= 2V

40

hFE-2*

DC Current Gain

IC= 1.5A; VCE= 2V

25

100

hFE-3*

DC Current Gain

IC= 3A; VCE= 2V

10

hFE-4*

DC Current Gain

IC= 5A; VCE= 4V

4

*:Pulse test:Pulse width=300us,duty cycle≤2%

Nº de peça semelhante - 2N4233A

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