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2N4240 Folha de dados(PDF) 2 Page - Inchange Semiconductor Company Limited

Nome de Peças 2N4240
Descrição Electrónicos  isc Silicon NPN Power Transistor
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Fabricante Electrônico  ISC [Inchange Semiconductor Company Limited]
Página de início  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2N4240 Folha de dados(HTML) 2 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
2
isc Silicon NPN Power Transistor
2N4240
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
VCEO(SUS)*
Collector-Emitter Sustaining Voltage
IC=200mA; IB= 0
300
V
ICEO
Collector Cutoff Current
VCE=150V;IB= 0
0.5
mA
ICEX
Collector-Emitter Leakage current
VCE=450V,VBE(OFF)=1.5V
2.0
mA
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
0.5
mA
VCE(sat)*
Collector-Emitter Saturation Voltage
IC= 0.75A; IB= 75mA
1.0
V
VBE(sat)*
Base-Emitter Saturation Voltage
IC= 0.75A; IB= 75mA
1.8
V
VBE(ON)*
Base-Emitter On Voltage
IC=0.1A;VCE= 10V
1.4
V
hFE-1*
DC Current Gain
IC= 0.1A; VCE= 10V
40
hFE-2*
DC Current Gain
IC= 0.75A; VCE= 2V
10
100
hFE-3*
DC Current Gain
IC= 0.75A; VCE= 10V
30
150
*:Pulse test:Pulse width=300us,duty cycle≤2%


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