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IRLML6302GTRPBF Folha de dados(PDF) 1 Page - ZP Semiconductor

Nome de Peças IRLML6302GTRPBF
Descrição Electrónicos  HEXFETPower MOSFET
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Fabricante Electrônico  ZPSEMI [ZP Semiconductor]
Página de início  http://zpsemi.com/
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IRLML6302GTRPBF Folha de dados(HTML) 1 Page - ZP Semiconductor

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VDSS = -20V
RDS(on) = 0.60Ω
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
A customized leadframe has been incorporated into the
standard SOT-23 package to produce a HEXFET Power
MOSFET with the industry's smallest footprint. This
package, dubbed the Micro3, is ideal for applications
where printed circuit board space is at a premium. The
low profile (<1.1mm) of the Micro3 allows it to fit easily into
extremely thin application environments such as portable
electronics and PCMCIA cards.
IRLML6302PbF
Description
l
Generation V Technology
l
Ultra Low On-Resistance
l
P-Channel MOSFET
l
SOT-23 Footprint
l
Low Profile (<1.1mm)
l
Available in Tape and Reel
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Fast Switching
Parameter
Max.
Units
ID @ TA = 25°C
Continuous Drain Current, VGS @ -4.5V
-0.78
ID @ TA = 70°C
Continuous Drain Current, VGS @ -4.5V
-0.62
A
IDM
Pulsed Drain Current 
-4.9
PD@TA = 25°C
Power Dissipation
540
mW
Linear Derating Factor
4.3
mW/°C
VGS
Gate-to-Source Voltage
± 12
V
dv/dt
Peak Diode Recovery dv/dt ‚
-5.0
V/ns
TJ,TSTG
Junction and Storage Temperature Range
-55 to + 150
°C
Absolute Maximum Ratings
Parameter
Typ.
Max.
Units
RθJA
Maximum Junction-to-Ambient
„
–––
230
Thermal Resistance
°C/W
l
Lead-Free
Micro3TM
6
* 

'

HEXFET® Power MOSFET
1 of 2
sales@zpsemi.com
www.zpsemi.com


Nº de peça semelhante - IRLML6302GTRPBF

Fabricante ElectrônicoNome de PeçasFolha de dadosDescrição Electrónicos
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International Rectifier
IRLML6302GPBF IRF-IRLML6302GPBF Datasheet
249Kb / 8P
   HEXFET POWER MOSFET
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