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TP5335 Folha de dados(PDF) 1 Page - Supertex, Inc |
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TP5335 Folha de dados(HTML) 1 Page - Supertex, Inc |
1 / 3 page Supertex inc. Supertex inc. www.supertex.com Doc.# DSFP-TP5335 B081913 TP5335 Features ► High input impedance and high gain ► Low power drive requirement ► Ease of paralleling ► Low C ISS and fast switching speeds ► Excellent thermal stability ► Integral source-drain diode ► Free from secondary breakdown Applications ► Logic level interfaces - ideal for TTL and CMOS ► Solid state relays ► Analog switches ► Power management ► Telecom switches P3SW W = Code for week sealed = “Green” Packaging General Description The Supertex TP5335 is a low threshold enhancement- mode (normally-off) transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Pin Configuration Product Marking TO-236AB (SOT-23) DRAIN SOURCE GATE TO-236AB (SOT-23) Package may or may not include the following marks: Si or P-Channel Enhancement-Mode Vertical DMOS FET Absolute Maximum Ratings Parameter Value Drain-to-source voltage BV DSS Drain-to-gate voltage BV DGS Gate-to-source voltage ±20V Operating and storage temperature -55OC to +150OC Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. Ordering Information Part Number Package Option Packing TP5335K1-G TO-236AB (SOT-23) 3000/Reel Product Summary BV DSS/BVDGS R DS(ON) (max) V GS(th) (max) -350V 30Ω -2.4V -G denotes a lead (Pb)-free / RoHS compliant package. Contact factory for Wafer / Die availablity. Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant. Typical Thermal Resistance Package θ ja TO-236AB (SOT-23) 203OC/W |
Nº de peça semelhante - TP5335_13 |
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Descrição semelhante - TP5335_13 |
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