SI4569DY datasheet(2/12 Pages) VISHAY

Nome de Peças	SI4569DY

Descrição Electrónicos	N- and P-Channel 40-V (D-S) MOSFET

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Document Number: 73586

S09-0393-Rev. B, 09-Mar-09

Vishay Siliconix

Si4569DY

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min.

Typ.a

Max.

Unit

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 µA

N-Ch

40

V

VGS = 0 V, ID = - 250 µA

P-Ch

- 40

VDS Temperature Coefficient

ΔV

DS/TJ

ID = 250 µA

N-Ch

37

ID = - 250 µA

P-Ch

- 38

VGS(th) Temperature Coefficient

ΔV

GS(th)/TJ

ID = 250 µA

N-Ch

- 5

ID = - 250 µA

P-Ch

4.0

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

N-Ch

0.6

2.0

VDS = VGS, ID = - 250 µA

P-Ch

- 0.8

- 2.2

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ± 16 V

N-Ch

100

nA

P-Ch

- 100

Zero Gate Voltage Drain Current

IDSS

VDS = 40 V, VGS = 0 V

N-Ch

1

µA

VDS = - 40 V, VGS = 0 V

P-Ch

- 1

VDS = 40 V, VGS = 0 V, TJ = 55 °C

N-Ch

10

VDS = - 40 V, VGS = 0 V, TJ = 55 °C

P-Ch

- 10

On-State Drain Currentb

ID(on)

VDS = 5 V, VGS = 10 V

N-Ch

20

A

VDS = - 5 V, VGS = - 10 V

P-Ch

- 20

Drain-Source On-State Resistanceb

RDS(on)

VGS = 10 V, ID = 6 A

N-Ch

0.022

0.027

Ω

VGS = - 10 V, ID = - 6 A

P-Ch

0.024

0.029

VGS = 4.5 V, ID = 4.8 A

N-Ch

0.026

0.032

VGS = - 4.5 V, ID = - 4.9 A

P-Ch

0.031

0.039

Forward Transconductanceb

gfs

VDS = 15 V, ID = 6 A

N-Ch

20

S

VDS = - 15 V, ID = - 6 A

P-Ch

17

Dynamica

Input Capacitance

Ciss

N-Channel

VDS = 20 V, VGS = 0 V, f = 1 MHz

P-Channel

VDS = - 20 V, VGS = 0 V, f = 1 MHz

N-Ch

855

pF

P-Ch

1505

Output Capacitance

Coss

N-Ch

105

P-Ch

230

Reverse Transfer Capacitance

Crss

N-Ch

65

P-Ch

175

Total Gate Charge

Qg

VDS = 20 V, VGS = 10 V, ID = 5 A

N-Ch

21

32

nC

VDS = - 20 V, VGS = - 10 V, ID = - 5 A

P-Ch

41

62

N-Channel

VDS = 20 V, VGS = 4.5 V, ID = 5 A

P-Channel

VDS = - 20 V, VGS = - 4.5 V, ID = - 5 A

N-Ch

9.6

14.5

P-Ch

21

31

Gate-Source Charge

Qgs

N-Ch

2.3

P-Ch

4.5

Gate-Drain Charge

Qgd

N-Ch

3.2

P-Ch

9.2

Gate Resistance

Rg

f = 1 MHz

N-Ch

2.5

3.8

Ω

P-Ch

6.5

10

Nº de peça semelhante - SI4569DY

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Vaishali Semiconductor	SI4569DY	355Kb / 4P	N- and P-Channel 40-V (D-S) MOSFET
Vishay Siliconix	SI4569DY	134Kb / 12P	N- and P-Channel 40-V (D-S) MOSFET 01-Jan-2022
VBsemi Electronics Co.,...	SI4569DY-T1-E3	1Mb / 14P	N- and P-Channel 40V (D-S) MOSFET
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