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SI2303DS Folha de dados(PDF) 2 Page - Vishay Siliconix |
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SI2303DS Folha de dados(HTML) 2 Page - Vishay Siliconix |
2 / 4 page Si2303DS Vishay Siliconix www.vishay.com S FaxBack 408-970-5600 2-2 Document Number: 70770 S-49557—Rev. B, 27-Apr-98 MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = –10 mA –30 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = –250 mA –1.0 V Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA Zero Gate Voltage Drain Current IDSS VDS = –30 V, VGS = 0 V –1 mA Zero Gate Voltage Drain Current IDSS VDS = –30 V, VGS = 0 V, TJ = 55_C –10 mA On-State Drain Currenta ID(on) VDS w –5 V, VGS = –10 V –6 A Drain Source On State Resistancea rDS( ) VGS = –10 V, ID = –1.7 A 0.190 0.240 W Drain-Source On-State Resistancea rDS(on) VGS = –4.5 V, ID = –1.3 A 0.240 0.460 W Forward Transconductancea gfs VDS = –10 V, ID = –1.7 A 2.4 S Diode Forward Voltage VSD IS = –1.25 A, VGS = 0 V –0.8 –1.2 V Dynamicb Total Gate Charge Qg V15 V V 10 V I 1 7 A 5.8 10 C Gate-Source Charge Qgs VDS = –15 V, VGS = –10 V, ID = –1.7 A 0.8 nC Gate-Drain Charge Qgd 1.5 Input Capacitance Ciss V15 V V 0 V f 1 MH 226 F Output Capacitance Coss VDS = –15 V, VGS = 0 V, f = 1 MHz 87 pF Reverse Transfer Capacitance Crss 19 Switchingb Turn-On Delay Time td(on) V15 V R 15 W 9 20 Rise Time tr VDD = –15 V, RL = 15 W I 1 A V 10 V R 6 W 9 20 ns Turn-Off Delay Time td(off) DD , L ID ^ –1 A, VGEN = –10 V, RG = 6 W 18 35 ns Fall Time tf 6 20 Notes a. Pulse test: PW v300 ms duty cycle v2%. b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature. |
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