BD41030FJ-G datasheet(9/25 Pages) ROHM

Nome de Peças	BD41030FJ-G

Descrição Electrónicos	LIN Transceiver for Automotive

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Fabricante Electrônico	ROHM [Rohm]

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BD41030FJ-C

BD41030HFN-C

Electrical Characteristics (Ta= -40 to +125°C; VBAT =5 to 27V; RL(LIN-BAT)

=500Ω; typical values are given at

Ta=25°C; VBAT =12V; unless otherwise specified)

Table 7. Electrical Characteristics

Parameter

Symbol

Min

Typ

Max

Unit

Conditions

AC characteristics

(Note 7)

RXD propagation delay

tPropRxDom

-

6.0

μs

Normal mode

CL(LIN-GND) = 0nF

RL(LIN-BAT)

= ∞

Voltage on LIN

externally forced.

LIN tf, tr < 20ns

CRXD = 20pF

RRXD

= 2.4kΩ

⊿td_(BUS-RXD)=

tPropRxDom-tPropRxRec

tPropRxRec

-

6.0

μs

RXD propagation delay failure

⊿td_(BUS-RXD)

-2.0

0.0

+2.0

μs

Duty cycle 1

(Note 4, Note 5)

D1

0.396

-

Normal mode

THRec(max) = 0.744 x VBAT

THDom(max) = 0.581 x VBAT

VBAT=7.0 to 18.0V

tBit

=50μs

Duty cycle 2

(Note 4, Note 6)

D2

-

0.581

Normal mode

THRec(min) = 0.422 x VBAT

THDom(min) = 0.284 x VBAT

VBAT=7.6 to 18.0V

tBit

=50μs

Duty cycle 3

(Note 4, Note 5)

D3

0.417

-

Normal mode

THRec(max) = 0.778 x VBAT

THDom(max) = 0.616 x VBAT

VBAT=7.0 to 18.0V

tBit

=96μs

Duty cycle 4

(Note 4, Note 6)

D4

-

0.590

Normal mode

THRec(min) = 0.389 x VBAT

THDom(min) = 0.251 x VBAT

VBAT=7.6 to 18.0V

tBit

=96μs

Dominant time for wake-up via bus

tBUS

30

70

150

μs

Sleep mode

(Remote wake-up)

Dominant time for wake-up via pin

NWAKE

tNWAKE

7

20

50

μs

Sleep mode

(Local wake-up)

Time period for mode change from

sleep or standby mode into normal

mode

tgotonorm

2

5

10

μs

Shift

from

Sleep/Standby

mode to Normal mode

Time period for mode change from

normal mode into sleep mode

tgotosleep

2

5

10

μs

Shift from Normal mode to

Sleep mode

TXD dominant time out

tdom

6

12

20

ms

VTXD = 0V

(Note 3)

(Note 4) Load condition at bus ( CL(LIN-GND);RL(LIN-BAT)

) : 1nF;1kΩ / 6.8nF;660Ω / 10nF;500Ω

(Note 5)

Bit

(min)

Bus_rec

2

3

,

1

xt

t

D

=

〇Product structure : Silicon monolithic integrated circuit 〇This product has no designed protection against radioactive rays

.

9/21

TSZ02201-0E2E0H500640-1-2

2016.08.18 Rev.002

TSZ22111 • 14 • 001

www.rohm.com

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