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STGB4M65DF2 Folha de dados(PDF) 5 Page - STMicroelectronics

Nome de Peças STGB4M65DF2
Descrição Electrónicos  Trench gate field-stop IGBT, M series 650 V, 4 A low loss
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGB4M65DF2 Folha de dados(HTML) 5 Page - STMicroelectronics

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STGB4M65DF2
Electrical characteristics
DocID028667 Rev 4
5/18
Table 6: IGBT switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on delay time
VCE = 400 V, IC = 4 A,
VGE = 15 V, RG = 47
Ω
(see Figure 29: " Test
circuit for inductive load
switching" )
12
-
ns
tr
Current rise time
6.9
-
ns
(di/dt)on
Turn-on current slope
480
-
A/µs
td(off)
Turn-off-delay time
86
-
ns
tf
Current fall time
120
-
ns
Eon(1)
Turn-on switching energy
0.040
-
mJ
Eoff(2)
Turn-off switching energy
0.136
-
mJ
Ets
Total switching energy
0.176
-
mJ
td(on)
Turn-on delay time
VCE = 400 V, IC = 4 A,
VGE = 15 V, RG = 47
Ω,
TJ = 175 °C
(see Figure 29: " Test
circuit for inductive load
switching" )
11.6
-
ns
tr
Current rise time
8
-
ns
(di/dt)on
Turn-on current slope
410
-
A/µs
td(off)
Turn-off-delay time
85
-
ns
tf
Current fall time
211
-
ns
Eon(1)
Turn-on switching energy
0.067
-
mJ
Eoff(2)
Turn-off switching energy
0.210
-
mJ
Ets
Total switching energy
0.277
-
mJ
tsc
Short-circuit withstand time
VCC
≤ 400 V, VGE = 15 V,
TJstart = 150 °C
6
-
µs
VCC
≤ 400 V, VGE = 13 V,
TJstart = 150 °C
10
-
µs
Notes:
(1)Including the reverse recovery of the diode.
(2)Including the tail of the collector current.
Table 7: Diode switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
trr
Reverse recovery time
IF = 4 A, VR = 400 V,
VGE = 15 V,
di/dt = 800 A/µs
(see Figure 29: " Test
circuit for inductive load
switching")
-
133
-
ns
Qrr
Reverse recovery charge
-
140
-
nC
Irrm
Reverse recovery current
-
5
-
A
dIrr/dt
Peak rate of fall of reverse
recovery current during tb
-
520
-
A/µs
Err
Reverse recovery energy
-
15
-
µJ
trr
Reverse recovery time
IF = 4 A, VR = 400 V,
VGE = 15 V, TJ = 175 °C,
di/dt = 800 A/µs
(see Figure 29: " Test
circuit for inductive load
switching")
-
236
-
ns
Qrr
Reverse recovery charge
-
370
-
nC
Irrm
Reverse recovery current
-
6.6
-
A
dIrr/dt
Peak rate of fall of reverse
recovery current during tb
-
378
-
A/µs
Err
Reverse recovery energy
-
32
-
µJ


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