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2SK3440 Folha de dados(PDF) 4 Page - Toshiba Semiconductor |
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2SK3440 Folha de dados(HTML) 4 Page - Toshiba Semiconductor |
4 / 6 page 2SK3440 2002-03-04 4 Case temperature Tc (°C) RDS (ON) – Tc Drain-source voltage VDS (V) IDR – VDS Drain-source voltage VDS (V) Capacitance – VDS Case temperature Tc (°C) Vth – Tc Case temperature Tc (°C) PD – Tc Total gate charge Qg (nC) Dynamic input/output characteristics 0 0.1 Common source Tc = 25°C Pulse test −0.4 1 10 100 1000 −0.8 −1.2 −1.4 VGS = 0 V 10 3 1 −1 −0.6 −0.2 0.1 10 100 1000 10000 1 10 100 Common source VGS = 0 V f = 1 MHz Tc = 25°C Ciss Coss Crss −40 0 40 80 120 160 −80 14 Common source VGS = 10 V Pulse test 6 2 0 ID = 50 A 12 25 4 10 8 12 200 120 10 0 40 80 120 160 40 80 160 200 0 4 8 16 20 0 0 20 60 80 100 40 120 80 12 40 VDS = 12 V Common source ID = 50 A Tc = 25°C Pulse test 24 48 VDS VGS 20 100 60 0 2 3 4 6 −80 −40 0 40 120 160 Common source VDS = 10 V ID = 1 mA Pulse test 80 5 1 |
Nº de peça semelhante - 2SK3440 |
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Descrição semelhante - 2SK3440 |
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