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Os motores de busca de Datasheet de Componentes eletrônicos |
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Os motores de busca de Datasheet de Componentes eletrônicos |
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2SK765A Folha de dados(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SK765A Folha de dados(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page  INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.com isc & iscsemi is registered trademark 2 isc N-Channel Mosfet Transistor 2SK765A · ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA 450 V VGS(th) Gate Threshold Voltage VDS=25 V; ID=1mA 1.0 5.0 V RDS(on) Drain-Source On-stage Resistance VGS=10V; ID= 5A 0.5 0.75 Ω IGSS Gate Source Leakage Current VGS= ±20V;VDS= 0 ± 1 uA IDSS Zero Gate Voltage Drain Current VDS=320V; VGS= 0 100 uA VSD Diode Forward Voltage IF=10A; VGS=0 1.2 V ton Turn-on time VGS=10V;ID=2.1A; RL=50Ω 70 ns toff Turn-off time 320 ns |
Nº de peça semelhante - 2SK765A |
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Descrição semelhante - 2SK765A |
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