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IRF131 Folha de dados(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IRF131 Folha de dados(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor IRF131 DESCRIPTION · Drain Current ID=14A@ TC=25℃ · Drain Source Voltage- : VDSS= 60V(Min) · Static Drain-Source On-Resistance : RDS(on) =0.18Ω(Max) · High Power,High Speed Applications APPLICATIONS · Switching power supplies · UPS · Motor controls · High energy pulse circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 60 V VGS Gate-Source Voltage ± 20 V ID Drain Current-continuous@ TC=25℃ 14 A Ptot Total Dissipation@TC=25℃ 75 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.67 ℃ /W |
Nº de peça semelhante - IRF131 |
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Descrição semelhante - IRF131 |
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