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IRF614A Folha de dados(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IRF614A Folha de dados(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc N-Channel Mosfet Transistor IRF614A · FEATURES · Low RDS(on) · VGS Rated at ±30V · Silicon Gate for Fast Switching Speed · Rugged · Low Drive Requirements · DESCRITION · Designed for high speed applications, such as switching power supplies , AC and DC motor controls,relay and solenoid drivers and other pulse. · ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 250 V VGS Gate-Source Voltage-Continuous ± 20 V ID Drain Current-Continuous 2.8 A IDM Drain Current-Single Plused 8.5 A PD Total Dissipation @TC=25℃ 40 W Tj Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ · THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 3.14 ℃ /W Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃ /W |
Nº de peça semelhante - IRF614A |
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Descrição semelhante - IRF614A |
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