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ADF4360-4BCP Folha de dados(PDF) 4 Page - Analog Devices

Nome de Peças ADF4360-4BCP
Descrição Electrónicos  Integrated Synthesizer and VCO
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Fabricante Electrônico  AD [Analog Devices]
Página de início  http://www.analog.com
Logo AD - Analog Devices

ADF4360-4BCP Folha de dados(HTML) 4 Page - Analog Devices

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PRELIMINARY TECHNICAL DATA
REV. PrA
07/03
ADF4360-2
–4–
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V
readily accumulate on the human body and test equipment and can discharge without
detection. Although the ADF4360 family features proprietary ESD protection circuitry,
permanent damage may occur on devices subjected to high-energy electrostatic
discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICEÎ
TIMINGCHARACTERISTICS
Limit at
TMIN to TMAX
Parameter
(B Version)
Units
Test Conditions/Comments
t1
20
ns min
LE Set Up Time
t2
10
ns min
DATA to CLOCK Set Up Time
t3
10
ns min
DATA to CLOCK Hold Time
t4
25
ns min
CLOCK High Duration
t5
25
ns min
CLOCK Low Duration
t6
10
ns min
CLOCK to LE Set Up Time
t7
20
ns min
LE Pulse Width
(AVDD = DVDD = VVCO = +3.3V ± 10%; AGND = DGND = 0 V; 1.8V and 3V Logic Levels Used; TA =
TMIN to TMAX unless otherwise noted)
Figure 1. Timing Diagram
ABSOLUTE MAXIMUM RATINGS1, 2
(T
A = +25°C unless otherwise noted)
AVDD to GND
3...................................–0.3 V to +3.9 V
AVDD to DVDD ...................................–0.3 V to +0.3 V
VVCO to GND......................................–0.3 V to +3.9 V
VVCO to AVDD ......................................–0.3 V to +0.3 V
Digital I/O Voltage to GND..........–0.3 V to VDD + 0.3 V
Analog I/O Voltage to GND..........–0.3 V to VDD + 0.3 V
REFIN, to GND............................–0.3 V to VDD + 0.3 V
OperatingTemperature Range
Maximum Junction Temperature........................+150°C
CSP
θ
JA Thermal Impedance
(Paddle Soldered).......................................50°C/W
(Paddle Not Soldered).................................88°C/W
Lead Temperature, Soldering
Vapor Phase (60 sec)......................................+215°C
Infrared (15 sec)............................................+220°C
1 . Stresses above those listed under “Absolute Maximum Ratings” may
cause permanent damage to the device.
This is a stress rating only and
functional operation of the device at these or any other conditions above
those listed in the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.
2 . This device is a high-performance RF integrated circuit with an ESD
rating of < 1kV and it is ESD sensitive. Proper precautions should be
taken for handling and assembly.
3 . GND = AGND = DGND = 0V
TRANSISTOR COUNT
12543 (CMOS) and 700 (Bipolar)
t
6
t
7
CLOCK
DB23
(MSB)
DB22
DB2
DB1
(CONTROL BIT C2)
DATA
LE
LE
DB0 (LSB)
(CONTROL BIT C1)
t
2
t
3
t
4
t
5
t
1


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