Os motores de busca de Datasheet de Componentes eletrônicos
  Portuguese  ▼
ALLDATASHEETPT.COM

X  

KM6164000BLTI-10L Folha de dados(PDF) 2 Page - Samsung semiconductor

Nome de Peças KM6164000BLTI-10L
Descrição Electrónicos  256Kx16 bit Low Power CMOS Static RAM
Download  9 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricante Electrônico  SAMSUNG [Samsung semiconductor]
Página de início  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KM6164000BLTI-10L Folha de dados(HTML) 2 Page - Samsung semiconductor

  KM6164000BLTI-10L Datasheet HTML 1Page - Samsung semiconductor KM6164000BLTI-10L Datasheet HTML 2Page - Samsung semiconductor KM6164000BLTI-10L Datasheet HTML 3Page - Samsung semiconductor KM6164000BLTI-10L Datasheet HTML 4Page - Samsung semiconductor KM6164000BLTI-10L Datasheet HTML 5Page - Samsung semiconductor KM6164000BLTI-10L Datasheet HTML 6Page - Samsung semiconductor KM6164000BLTI-10L Datasheet HTML 7Page - Samsung semiconductor KM6164000BLTI-10L Datasheet HTML 8Page - Samsung semiconductor KM6164000BLTI-10L Datasheet HTML 9Page - Samsung semiconductor  
Zoom Inzoom in Zoom Outzoom out
 2 / 9 page
background image
KM6164000B Family
CMOS SRAM
Revision 4.01
June 1998
2
256Kx16 bit Low Power CMOS Static RAM
GENERAL DESCRIPTION
The KM616V4000B families are fabricated by SAMSUNG
′s
advanced CMOS process technology. The families support
various operating temperature ranges and small package
types for user flexibility of system design. The families also
support low data retention voltage for battery back-up opera-
tion with low data retention current.
FEATURES
• Process Technology : TFT
• Organization : 256Kx16
• Power Supply Voltage : 4.5~5.5V
• Low Data Retention Voltage : 2V(Min)
• Three state output and TTL Compatible
• Package Type : 44-TSOP2-400F/R
PIN DESCRIPTION
Name
Function
Name
Function
CS
Chip Select Input
Vcc
Power
OE
Output Enable Input
Vss
Ground
WE
Write Enable Input
UB
Upper Byte(I/O9~16)
A0~A17
Address Inputs
LB
Lower Byte (I/O1~8)
I/O1~I/O16
Data Inputs/Outputs
N.C
No Connection
PRODUCT FAMILY
1. The parameter is measured with 50pF test load.
Product Family
Operating Temperature
Vcc Range
Speed(ns)
Power Dissipation
PKG Type
Standby
(ISB1, Max)
Operating
(ICC2, Max)
KM6164000BL-L
Commercial(0~70
°C)
4.5~5.5V
551)/70
20
µA
130mA
44-TSOP2-F/R
KM6164000BLI-L
Industrial(-40~85
°C)
4.5~5.5V
70/100
50
µA
FUNCTIONAL BLOCK DIAGRAM
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.
A4
A3
A2
A1
A0
CS
I/OI
I/O2
I/O3
I/O4
Vcc
Vss
I/O5
I/O6
I/O7
I/O8
WE
A17
A16
A15
A14
A5
A6
A7
OE
UB
LB
I/O16
I/O15
I/O14
I/O13
Vss
Vcc
I/O12
I/O11
I/O10
I/O9
N.C
A8
A9
A10
44-TSOP2
Forward
44-TSOP2
Reverse
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
A5
A6
A7
OE
UB
LB
I/O16
I/O15
I/O14
I/O13
Vss
Vcc
I/O12
I/O11
I/O10
I/O9
N.C
A8
A9
A10
A11
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
A13
A12
A11
A12
A4
A3
A2
A1
A0
CS
I/OI
I/O2
I/O3
I/O4
Vcc
Vss
I/O5
I/O6
I/O7
I/O8
WE
A17
A16
A15
A14
A13
Clk gen.
Row
select
A8 A9 A10 A5 A6
A4
A7
A13
A14
A0
A1
A15
A16
A17
A2
I/O1~I/O8
A3
Data
cont
Data
cont
Data
cont
I/O9~I/O16
Vcc
Vss
A4
A12
Precharge circuit.
Memory array
1024 rows
256
×16 columns
I/O Circuit
Column select
WE
OE
UB
CS
LB
Control
logic


Nº de peça semelhante - KM6164000BLTI-10L

Fabricante ElectrônicoNome de PeçasFolha de dadosDescrição Electrónicos
logo
Samsung semiconductor
KM6164002 SAMSUNG-KM6164002 Datasheet
167Kb / 9P
   CMOS SRAM
KM6164002E SAMSUNG-KM6164002E Datasheet
167Kb / 9P
   CMOS SRAM
KM6164002I SAMSUNG-KM6164002I Datasheet
167Kb / 9P
   CMOS SRAM
More results

Descrição semelhante - KM6164000BLTI-10L

Fabricante ElectrônicoNome de PeçasFolha de dadosDescrição Electrónicos
logo
Samsung semiconductor
K6T4016C3B SAMSUNG-K6T4016C3B Datasheet
149Kb / 9P
   256Kx16 bit Low Power CMOS Static RAM
K6X4016C3F SAMSUNG-K6X4016C3F Datasheet
131Kb / 9P
   256Kx16 bit Low Power full CMOS Static RAM
K6X4016T3F SAMSUNG-K6X4016T3F Datasheet
138Kb / 9P
   256Kx16 bit Low Power and Low Voltage CMOS Static RAM
K6T4016V3C SAMSUNG-K6T4016V3C Datasheet
154Kb / 9P
   256Kx16 bit Low Power and Low Voltage CMOS Static RAM
logo
Integrated Circuit Solu...
IC62VV25616LL ICSI-IC62VV25616LL Datasheet
321Kb / 11P
   256Kx16 bit 1.8V and Ultra Low Power CMOS Static RAM
IC62LV25616L ICSI-IC62LV25616L Datasheet
126Kb / 11P
   256Kx16 bit Low Voltage and Ultra Low Power CMOS Static RAM
logo
Samsung semiconductor
K6F4016U6G SAMSUNG-K6F4016U6G Datasheet
180Kb / 9P
   256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F4016U4G SAMSUNG-K6F4016U4G Datasheet
173Kb / 9P
   256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6R4016V1C-C SAMSUNG-K6R4016V1C-C Datasheet
190Kb / 11P
   256Kx16 Bit High Speed Static RAM(3.3V Operating)
K6R4016V1D SAMSUNG-K6R4016V1D Datasheet
227Kb / 12P
   256Kx16 Bit High Speed Static RAM(3.3V Operating)
More results


Html Pages

1 2 3 4 5 6 7 8 9


Folha de dados Download

Go To PDF Page


Ligação URL




Privacy Policy
ALLDATASHEETPT.COM
ALLDATASHEET é útil para você?  [ DONATE ] 

Sobre Alldatasheet   |   Publicidade   |   Contato conosco   |   Privacy Policy   |   roca de Link   |   Lista de Fabricantes
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com