BDX33B_14 datasheet(2/6 Pages) ONSEMI

Nome de Peças	BDX33B

Descrição Electrónicos	Darlington Complementary Silicon Power Transistors

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Fabricante Electrônico	ONSEMI [ON Semiconductor]

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2 / 6 page

BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP)

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60

40

20

0

20

40

60

80

100

120

140

160

Figure 1. Power Derating

TC, CASE TEMPERATURE (°C)

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 1)

(IC = 100 mAdc, IB = 0)

BDX33B/BDX34B

BDX33C/BDX34C

VCEO(sus)

80

100

−

Vdc

Collector−Emitter Sustaining Voltage (Note 1)

(IC = 100 mAdc, IB = 0, RBE = 100)

BDX33B/BDX34B

BDX33C/BDX33C

VCER(sus)

80

100

−

Vdc

Collector−Emitter Sustaining Voltage (Note 1)

(IC = 100 mAdc, IB = 0, VBE = 1.5 Vdc)

BDX33B/BDX34B

BDX33C/BDX34C

VCEX(sus)

80

100

−

Vdc

Collector Cutoff Current

(VCE = 1/2 rated VCEO, IB = 0)

TC = 25°C

TC = 100°C

ICEO

−

0.5

10

mAdc

Collector Cutoff Current

(VCB = rated VCBO, IE = 0)

TC = 25°C

TC = 100°C

ICBO

−

1.0

5.0

mAdc

Emitter Cutoff Current

(VBE = 5.0 Vdc, IC = 0)

IEBO

−

10

mAdc

ON CHARACTERISTICS

DC Current Gain (Note 1)

(IC = 3.0 Adc, VCE = 3.0 Vdc)

BDX33B, 33C/34B, 34C

hFE

750

−

Collector−Emitter Saturation Voltage

(IC = 3.0 Adc, IB = 6.0 mAdc)

BDX33B, 33C/34B, 34C

VCE(sat)

−

2.5

Vdc

Base−Emitter On Voltage

(IC = 3.0 Adc, VCE = 3.0 Vdc)

BDX33B, 33C/34B, 34C

VBE(on)

−

2.5

Vdc

Diode Forward Voltage

(IC = 8.0 Adc)

VF

−

4.0

Vdc

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

1. Pulse Test: Pulse Width

≤ 300 ms, Duty Cycle ≤ 2.0%.

2. Pulse Test non repetitive: Pulse Width = 0.25 seconds.

Nº de peça semelhante - BDX33B_14

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