NPN Medium Power Silicon Transistor

Rev. V1

2N3418(S) - 2N3421(S) Series

3

3

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Outline Drawing (TO-5 & TO-39)

LTR

Dimensions

Note

Inches

Millimeters

MIN

MAX

MIN

MAX

CD

0.305

0.335

7.75

8.51

—

CH

0.240

0.260

6.10

6.60

—

HD

0.335

0.370

8.51

9.40

—

LC

0.200 TP

5.08 TP

7

LD

0.016

0.019

0.041

0.048

8, 9

LL

0.500

0.750

12.7

19.05

—

LU

0.016

0.019

0.041

0.048

8, 9

L1

—

0.050

—

1.27

8, 9

L2

0.250

—

6.35

—

8, 9

P

0.100

—

2.54

—

7

Q

—

0.030

—

0.76

5

TL

0.029

0.045

0.74

1.14

—

TW

0.028

0.034

0.71

0.86

—

r

—

0.010

—

0.25

10

a

45° TP

45° TP

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1, 2, 10, 12, 13, 14

1. Dimensions are in inches.

2. Millimeters are given for general information only.

3. Beyond r (radius) maximum, TW shall be held for a minimum length of .011 (0.28 mm).

4. Dimension TL measured from maximum HD.

5. Body contour optional within zone defined by HD, CD, and Q.

6. CD shall not vary more than .010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling.

7. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within 0.007 inch (0.18 mm) radius of

true position (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be measured by direct methods or by

gauging procedure.

8. Dimension LU applies between L, and L,. Dimension LD applies between L, and LL minimum. Diameter is uncontrolled in and beyond LL

minimum.

9. All three leads.

10. The collector shall be internally connected to the case.

11. Dimension r (radius) applies to both inside corners of tab.

12. In accordance with ASME Y14.5M, diameters are equivalent to Фx symbology.

13. Lead 1 = emitter, lead 2 = base, lead 3 = collector.

14. For non-S-suffix devices (T0-5), dimension LL = 1.5 inches (38.10 mm) min. and 1.75 inches (44.45 mm) max. For S-suffix types (T0-39),

dimension LL = 0.5 inch (12.70 mm) min. and 750 inch (19.05 mm) max.