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BC817-16LT1G Folha de dados(PDF) 1 Page - ON Semiconductor |
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BC817-16LT1G Folha de dados(HTML) 1 Page - ON Semiconductor |
1 / 10 page © Semiconductor Components Industries, LLC, 1997 October, 2016 − Rev. 15 1 Publication Order Number: BC817−16LT1/D BC817-16L, SBC817-16L, BC817-25L, SBC817-25L, BC817-40L, SBC817-40L General Purpose Transistors NPN Silicon Features • S and NSV Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage VCEO 45 V Collector − Base Voltage VCBO 50 V Emitter − Base Voltage VEBO 5.0 V Collector Current − Continuous IC 500 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR− 5 Board, (Note 1) TA = 25°C Derate above 25 °C PD 225 1.8 mW mW/ °C Thermal Resistance, Junction−to−Ambient RqJA 556 °C/W Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25 °C PD 300 2.4 mW mW/ °C Thermal Resistance, Junction−to−Ambient RqJA 417 °C/W Junction and Storage Temperature TJ, Tstg − 65 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina. See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. ORDERING INFORMATION COLLECTOR 3 1 BASE 2 EMITTER SOT−23 CASE 318 STYLE 6 1 2 3 1 6x M G G 6x = Device Code x = A, B, or C M = Date Code* G = Pb−Free Package MARKING DIAGRAM (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. www.onsemi.com |
Nº de peça semelhante - BC817-16LT1G |
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Descrição semelhante - BC817-16LT1G |
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