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Os motores de busca de Datasheet de Componentes eletrônicos |
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Os motores de busca de Datasheet de Componentes eletrônicos |
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IRF7319 Folha de dados(PDF) 2 Page - International Rectifier |
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IRF7319 Folha de dados(HTML) 2 Page - International Rectifier |
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2 / 10 page  IRF7319
Surface mounted on FR-4 board, t ≤ 10sec. Parameter Min. Typ. Max. Units Conditions N-Ch 30 — — VGS = 0V, ID = 250µA P-Ch -30 — — VGS = 0V, ID = -250µA N-Ch — 0.022 — Reference to 25°C, ID = 1mA P-Ch — 0.022 — Reference to 25°C, ID = -1mA — 0.023 0.029 VGS = 10V, ID = 5.8A — 0.032 0.046 VGS = 4.5V, ID = 4.7A — 0.042 0.058 VGS = -10V, ID = -4.9A — 0.076 0.098 VGS = -4.5V, ID = -3.6A N-Ch 1.0 — — VDS = VGS, ID = 250µA P-Ch -1.0 — — VDS = VGS, ID = -250µA N-Ch — 14 — VDS = 15V, ID = 5.8A P-Ch — 7.7 — VDS = -15V, ID = -4.9A N-Ch — — 1.0 VDS = 24V, VGS = 0V P-Ch — — -1.0 VDS = -24V, VGS = 0V N-Ch — — 25 VDS = 24V, VGS = 0V, TJ = 55°C P-Ch — — -25 VDS = -24V, VGS = 0V, TJ = 55°C IGSS Gate-to-Source Forward Leakage N-P –– — ±100 VGS = ±20V N-Ch — 22 33 P-Ch — 23 34 N-Ch — 2.6 3.9 P-Ch — 3.8 5.7 N-Ch — 6.4 9.6 P-Ch — 5.9 8.9 N-Ch — 8.1 12 P-Ch — 13 19 N-Ch — 8.9 13 P-Ch — 13 20 N-Ch — 26 39 P-Ch — 34 51 N-Ch — 17 26 P-Ch — 32 48 N-Ch — 650 — P-Ch — 710 — N-Ch — 320 — pF P-Ch — 380 — N-Ch — 130 — P-Ch — 180 — V(BR)DSS Drain-to-Source Breakdown Voltage ∆V (BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(ON) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Drain-to-Source Leakage Current Qg Total Gate Charge Qgs Gate-to-Source Charge Qgd Gate-to-Drain ("Miller") Charge td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V V/°C Ω V S µA nC ns N-Channel ID = 5.8A, VDS = 15V, VGS = 10V P-Channel ID = -4.9A, VDS = -15V, VGS = -10V N-Channel VDD = 15V, ID = 1.0A, RG = 6.0Ω, RD = 15Ω P-Channel VDD = -15V, ID = -1.0A, RG = 6.0Ω, RD = 15Ω N-Channel VGS = 0V, VDS = 25V, ƒ = 1.0MHz P-Channel VGS = 0V, VDS = -25V, ƒ = 1.0MHz N-Ch P-Ch Parameter Min. Typ. Max. Units Conditions N-Ch — — 2.5 P-Ch — — -2.5 N-Ch — — 30 P-Ch — — -30 N-Ch — 0.78 1.0 TJ = 25°C, IS = 1.7A, VGS = 0V P-Ch — -0.78 -1.0 TJ = 25°C, IS = -1.7A, VGS = 0V N-Ch — 45 68 P-Ch — 44 66 N-Ch — 58 87 P-Ch — 42 63 Source-Drain Ratings and Characteristics IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge A V ns nC N-Channel TJ = 25°C, IF =1.7A, di/dt = 100A/µs P-Channel TJ = 25°C, IF = -1.7A, di/dt = 100A/µs N-Channel ISD ≤ 4.0A, di/dt ≤ 74A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C P-Channel ISD ≤ -2.8A, di/dt ≤ 150A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 22 ) Notes: Pulse width ≤ 300µs; duty cycle ≤ 2%. N-Channel Starting TJ = 25°C, L = 10mH RG = 25Ω, IAS = 4.0A. (See Figure 12) P-Channel Starting TJ = 25°C, L = 35mH RG = 25Ω, IAS = -2.8A. nA |
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Descrição semelhante - IRF7319 |
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