InGaAs Photodiode

SD039-121-011

WWW.LUNAINC.COM

Precision – Control – Results

Information in this technical datasheet is believed to

be correct and reliable. However, no responsibility is

assumed for possible inaccuracies or omission.

Specifications are subject to change without notice.

Page 2/2

REV 02-04-16

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Luna Optoelectronics, 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935

OPTO-ELECTRICAL PARAMETERS

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Breakdown Voltage

10

-

-

V

Responsivity

-

-

-

A/W

Shunt Resistance

TBD

-

-

M

Ω

Dark Current

-

-

100

nA

Capacitance

-

180

-

pF

Rise Time (50

Ω load)

-

TBD

ns

Noise Equivalent Power

-

10

10

Temperature Coefficient of

Shunt Resistance

TBD

TYPICAL PERFORMANCE

SPECTRAL RESPONSE

0.05

0.15

0.25

0.35

0.45

0.55

0.65

0.75

0.85

0.95

450

650

850

1050

1250

1450

1650

Wavelenght, nm