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SD039-121-011 Folha de dados(PDF) 2 Page - List of Unclassifed Manufacturers |
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2 / 2 page InGaAs Photodiode SD039-121-011 WWW.LUNAINC.COM Precision – Control – Results Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. Page 2/2 REV 02-04-16 © 2016 Luna Optoelectronics. All rights reserved. Luna Optoelectronics, 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 OPTO-ELECTRICAL PARAMETERS Ta = 23°C unless noted otherwise PARAMETER TEST CONDITIONS MIN TYP MAX UNITS Breakdown Voltage Ibias = 100 µA 10 - - V Responsivity λ= 500 nm - - - A/W Shunt Resistance Vbias = 10 mV TBD - - M Ω Dark Current Vbias = 5V - - 100 nA Capacitance Vbias = 0V; f = 1 MHz - 180 - pF Rise Time (50 Ω load) Vbias = 24V; λ= 826 nm - TBD ns Noise Equivalent Power λ= 900 nm - 10 10 -14W/Hz0.5 Temperature Coefficient of Shunt Resistance TBD TYPICAL PERFORMANCE SPECTRAL RESPONSE 0.05 0.15 0.25 0.35 0.45 0.55 0.65 0.75 0.85 0.95 450 650 850 1050 1250 1450 1650 Wavelenght, nm |
Nº de peça semelhante - SD039-121-011 |
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Descrição semelhante - SD039-121-011 |
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