BTA208S-800B datasheet(2/6 Pages) PHILIPS

Nome de Peças	BTA208S-800B

Descrição Electrónicos	Three quadrant triacs high commutation

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Fabricante Electrônico	PHILIPS [NXP Semiconductors]

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Philips Semiconductors

Product specification

Three quadrant triacs

BTA208S series B

high commutation

BTA208M series B

THERMAL RESISTANCES

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

R

th j-mb

Thermal resistance

full cycle

-

2.0

K/W

junction to mounting base

half cycle

-

2.4

K/W

R

th j-a

Thermal resistance

pcb (FR4) mounted; footprint as in Fig.14

-

75

-

K/W

junction to ambient

STATIC CHARACTERISTICS

T

j = 25 ˚C unless otherwise stated

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

I

GT

Gate trigger current

2

V

D = 12 V; IT = 0.1 A

T2+ G+

2

18

50

mA

T2+ G-

2

21

50

mA

T2- G-

2

34

50

mA

I

L

Latching current

V

D = 12 V; IGT = 0.1 A

T2+ G+

-

31

60

mA

T2+ G-

-

34

90

mA

T2- G-

-

30

60

mA

I

H

Holding current

V

D = 12 V; IGT = 0.1 A

-

31

60

mA

V

T

On-state voltage

I

T = 10 A

-

1.3

1.65

V

GT

Gate trigger voltage

V

D = 12 V; IT = 0.1 A

-

0.7

1.5

V

D = 400 V; IT = 0.1 A; Tj = 125 ˚C

0.25

0.4

-

V

I

D

Off-state leakage current

V

D = VDRM(max); Tj = 125 ˚C

-

0.1

0.5

mA

DYNAMIC CHARACTERISTICS

T

j = 25 ˚C unless otherwise stated

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

dV

D/dt

Critical rate of rise of

V

DM = 67% VDRM(max); Tj = 125 ˚C;

1000

4000

-

V/

µs

off-state voltage

exponential waveform; gate open circuit

dI

com/dt

Critical rate of change of

V

DM = 400 V; Tj = 125 ˚C; IT(RMS) = 8 A;

-

14

-

A/ms

commutating current

without snubber; gate open circuit

t

gt

Gate controlled turn-on

I

TM = 12 A; VD = VDRM(max); IG = 0.1 A;

-

2

-

µs

time

dI

G/dt = 5 A/µs

2 Device does not trigger in the T2-, G+ quadrant.

September 1997

2

Rev 1.200

Nº de peça semelhante - BTA208S-800B

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
NXP Semiconductors	BTA208S-800B	49Kb / 4P	Three quadrant triacs high commutation October 1999 Rev 1.200
	BTA208S-800B	86Kb / 13P	Three-quadrant triacs high commutation Rev. 02-31 May 2005
	BTA208S-800B	176Kb / 14P	3Q Hi-Com Triac Triggering in three quadrants only Rev. 03-14 April 2011
Inchange Semiconductor ...	BTA208S-800B	174Kb / 1P	isc Thyristors
WeEn Semiconductors	BTA208S-800B	267Kb / 13P	3Q Hi-com Triac

More results

Descrição semelhante - BTA208S-800B

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WeEn Semiconductors	BTA212B	923Kb / 8P	Three quadrant triacs high commutation
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	BTA212	45Kb / 4P	Three quadrant triacs high commutation October 1997 Rev 1.000
	BTA212B	22Kb / 4P	Three quadrant triacs high commutation September 1997 Rev 1.200
	BTA212X	20Kb / 4P	Three quadrant triacs high commutation October 1997 Rev 1.000
	BTA225	61Kb / 8P	Three quadrant triacs high commutation September 1997
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More results

BTA208S-800B Folha de dados(PDF) 2 Page - NXP Semiconductors

BTA208S-800B Folha de dados(HTML) 2 Page - NXP Semiconductors

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Descrição semelhante - BTA208S-800B

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