BC847CTT1G datasheet(2/6 Pages) ONSEMI

Nome de Peças	BC847CTT1G

Descrição Electrónicos	General Purpose Transistors

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Fabricante Electrônico	ONSEMI [ON Semiconductor]

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BC847ATT1, BC847BTT1, BC847CTT1

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector − Emitter Breakdown Voltage

(IC = 10 mA)

BC847 Series

V(BR)CEO

45

−

V

Collector − Emitter Breakdown Voltage

(IC = 10 mA, VEB = 0)

BC847 Series

V(BR)CES

50

−

V

Collector − Base Breakdown Voltage

(IC = 10 mA)

BC847 Series

V(BR)CBO

50

−

V

Emitter − Base Breakdown Voltage

(IE = 1.0 mA)

BC847 Series

V(BR)EBO

6.0

−

V

Collector Cutoff Current (VCB = 30 V)

(VCB = 30 V, TA = 150°C)

ICBO

−

15

5.0

nA

mA

ON CHARACTERISTICS

DC Current Gain

(IC = 10 mA, VCE = 5.0 V)

BC847A

BC847B

BC847C

(IC = 2.0 mA, VCE = 5.0 V)

BC847A

BC847B

BC847C

hFE

−

110

200

420

90

150

270

180

290

520

−

220

450

800

−

Collector − Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)

Collector − Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)

VCE(sat)

−

0.25

0.6

V

Base − Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)

Base − Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)

VBE(sat)

−

0.7

0.9

−

V

Base − Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V)

Base − Emitter Voltage (IC = 10 mA, VCE = 5.0 V)

VBE(on)

580

−

660

−

700

770

mV

SMALL− SIGNAL CHARACTERISTICS

Current − Gain − Bandwidth Product

(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)

fT

100

−

MHz

Output Capacitance (VCB = 10 V, f = 1.0 MHz)

Cobo

−

4.5

pF

Noise Figure

(IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz)

NF

−

10

dB

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

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