BU406_14 datasheet(2/3 Pages) ONSEMI

Nome de Peças	BU406

Descrição Electrónicos	NPN Power Transistors

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Fabricante Electrônico	ONSEMI [ON Semiconductor]

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2 / 3 page

BU406, BU407

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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 1)

BU406

(IC = 100 mAdc, IB = 0)

BU407

VCEO(sus)

200

150

−

Vdc

Collector Cutoff Current

(VCE = Rated VCEV, VBE = 0)

(VCE = Rated VCEO + 50 Vdc, VBE = 0)

(VCE = Rated VCEO + 50 Vdc, VBE = 0, TC = 150_C)

ICES

−

5

0.1

1

mAdc

Emitter Cutoff Current

BU406, BU407

(VEB = 6 Vdc, IC = 0)

IEBO

−

1

mAdc

ON CHARACTERISTICS (Note 1)

Collector−Emitter Saturation Voltage

(IC = 5 Adc, IB = 0.5 Adc)

VCE(sat)

−

1

Vdc

Base−Emitter Saturation Voltage

(IC = 5 Adc, IB = 0.5 Adc)

VBE(sat)

−

1.2

Vdc

Forward Diode Voltage

(IEC = 5 Adc) “D” only

VEC

−

2

Volts

DYNAMIC CHARACTERISTICS

Current−Gain − Bandwidth Product

(IC = 0.5 Adc, VCE = 10 Vdc, ftest = 20 MHz)

fT

10

−

MHz

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 1 MHz)

Cob

−

80

−

pF

SWITCHING CHARACTERISTICS

Inductive Load Crossover Time

(VCC = 40 Vdc, IC = 5 Adc, IB1 = IB2 = 0.5 Adc, L = 150 mH)

tc

−

0.75

ms

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

1. Pulse Test: Pulse Width

≤ 300 ms, Duty Cycle ≤ 1%.

100

0.1

Figure 1. DC Current Gain

IC, COLLECTOR CURRENT (AMPS)

10

0.2 0.3 0.5

0.7

1

5

7

10

50

20

70

30

TJ = 100°C

25

°C

23

VCE = 5 V

10

2

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

1

720

BONDING WIRE LIMIT

THERMAL LIMIT

SECOND BREAKDOWN LIMIT

3

5

30

50

70

200

0.1

10

TC = 25°C

Figure 2. Maximum Rated Forward

Bias Safe Operating Area

100

BU407

BU406

dc

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