MJE5850G datasheet(2/8 Pages) ONSEMI

Nome de Peças	MJE5850G

Descrição Electrónicos	Switch-mode Series PNP Silicon Power Transistors

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Fabricante Electrônico	ONSEMI [ON Semiconductor]

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MJE5850, MJE5851, MJE5852

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THERMAL CHARACTERISTICS

Rating

Symbol

Max

Unit

Thermal Resistance, Junction−to−Case

RqJC

1.25

_C/W

Maximum Lead Temperature for Soldering Purposes: 1/8

″ from Case for 5 Seconds

TL

275

_C

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage

(IC = 10 mA, IB = 0)

MJE5850

MJE5851

MJE5852

VCEO(sus)

300

350

400

−

Vdc

Collector Cutoff Current

(VCEV = Rated Value, VBE(off) = 1.5 Vdc)

(VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 100_C)

ICEV

−

0.5

2.5

mAdc

Collector Cutoff Current

(VCE = Rated VCEV, RBE = 50 W, TC = 100_C)

ICER

−

3.0

mAdc

Emitter Cutoff Current

(VEB = 6.0 Vdc, IC = 0)

IEBO

−

1.0

mAdc

SECOND BREAKDOWN

Second Breakdown Collector Current with base forward biased

IS/b

See Figure 12

Clamped Inductive SOA with base reverse biased

RBSOA

See Figure 13

ON CHARACTERISTICS (Note 2)

DC Current Gain

(IC = 2.0 Adc, VCE = 5 Vdc)

(IC = 5.0 Adc, VCE = 5 Vdc)

hFE

15

5

−

Collector−Emitter Saturation Voltage

(IC = 4.0 Adc, IB = 1.0 Adc)

(IC = 8.0 Adc, IB = 3.0 Adc)

(IC = 4.0 Adc, IB = 1.0 Adc, TC = 100_C)

VCE(sat)

−

2.0

5.0

2.5

Vdc

Base−Emitter Saturation Voltage

(IC = 4.0 Adc, IB = 1.0 Adc)

(IC = 4.0 Adc, IB = 1.0 Adc, TC = 100_C)

VBE(sat)

−

1.5

Vdc

DYNAMIC CHARACTERISTICS

Output Capacitance

(VCB = 10 Vdc, IE = 0, ftest = 1.0 kHz)

Cob

−

270

−

pF

SWITCHING CHARACTERISTICS

Resistive Load (Table 1)

Delay Time

(VCC = 250 Vdc, IC = 4.0 A, IB1 = 1.0 A,

tp = 50 ms, Duty Cycle ≤ 2%)

td

−

0.025

0.1

ms

Rise Time

tr

−

0.100

0.5

ms

Storage Time

(VCC = 250 Vdc, IC = 4.0 A, IB1 = 1.0 A,

VBE(off) = 5 Vdc, tp = 50 ms, Duty Cycle ≤ 2%)

ts

−

0.60

2.0

ms

Fall Time

tf

−

0.11

0.5

ms

Inductive Load, Clamped (Table 1)

Storage Time

(ICM = 4 A, VCEM = 250 V, IB1 = 1.0 A,

VBE(off) = 5 Vdc, TC = 100_C)

tsv

−

0.8

3.0

ms

Crossover Time

tc

−

0.4

1.5

ms

Fall Time

tfi

−

0.1

−

ms

Storage Time

(ICM = 4 A, VCEM = 250 V, IB1 = 1.0 A,

VBE(off) = 5 Vdc, TC = 25_C)

tsv

−

0.5

−

ms

Crossover Time

tc

−

0.125

−

ms

Fall Time

tfi

−

0.1

−

ms

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

2. Pulse Test: PW = 300

ms. Duty Cycle ≤ 2%

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