BCP68T3G datasheet(2/5 Pages) ONSEMI

Nome de Peças	BCP68T3G

Descrição Electrónicos	NPN Silicon Epitaxial Transistor

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BCP68T1G

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristics

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage

(IC = 100 mAdc, IE = 0)

V(BR)CES

25

−

Vdc

Collector−Emitter Breakdown Voltage

(IC = 1.0 mAdc, IB = 0)

V(BR)CEO

20

−

Vdc

Emitter−Base Breakdown Voltage

(IE = 10 mAdc, IC = 0)

V(BR)EBO

5.0

−

Vdc

Collector−Base Cutoff Current

(VCB = 25 Vdc, IE = 0)

ICBO

−

10

mAdc

Emitter−Base Cutoff Current

(VEB = 5.0 Vdc, IC = 0)

IEBO

−

10

mAdc

ON CHARACTERISTICS

DC Current Gain

(IC = 5.0 mAdc, VCE = 10 Vdc)

(IC = 500 mAdc, VCE = 1.0 Vdc)

(IC = 1.0 Adc, VCE = 1.0 Vdc)

hFE

50

85

60

−

375

−

Collector−Emitter Saturation Voltage

(IC = 1.0 Adc, IB = 100 mAdc)

VCE(sat)

−

0.5

Vdc

Base−Emitter On Voltage

(IC = 1.0 Adc, VCE = 1.0 Vdc)

VBE(on)

−

1.0

Vdc

DYNAMIC CHARACTERISTICS

Current−Gain − Bandwidth Product

(IC = 10 mAdc, VCE = 5.0 Vdc)

fT

−

60

−

MHz

Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

Cobo

−

15

−

pF

Output Capacitance (VEB = 5 Vdc, IE = 0, f = 1.0 MHz)

Cibo

−

145

−

pF

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

TYPICAL ELECTRICAL CHARACTERISTICS

300

200

100

10

1000

100

10

1.0

IC, COLLECTOR CURRENT (mA)

Figure 1. DC Current Gain

TJ = 125°C

= 25

°C

= - 55

°C

VCE = 1.0 V

IC, COLLECTOR CURRENT (mA)

Figure 2. Current-Gain-Bandwidth Product

300

200

100

70

50

30

1000

100

10

200

VCE = 10 V

TJ = 25°C

f = 30 MHz

Nº de peça semelhante - BCP68T3G

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
NXP Semiconductors	BCP68T	173Kb / 12P	NPN medium power transistor 20 V, 1 A 2003 Nov 25
Motorola, Inc	BCP68T1	149Kb / 6P	MEDIUM POWER NPN SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT
ON Semiconductor	BCP68T1	110Kb / 6P	MEDIUM POWER NPN SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT 1996 REV 1
	BCP68T1G	106Kb / 4P	NPN Silicon Epitaxial Transistor November, 2011 ??Rev. 7
	BCP68T1G	106Kb / 4P	NPN Silicon Epitaxial Transistor November, 2011 ??Rev. 7

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