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PZT2222A Folha de dados(PDF) 2 Page - ON Semiconductor |
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PZT2222A Folha de dados(HTML) 2 Page - ON Semiconductor |
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2 / 5 page  PZT2222A http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) V(BR)CEO 40 − Vdc Collector−Base Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)CBO °75° − Vdc Emitter−Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 6.0 − Vdc Base−Emitter Cutoff Current (VCE = 60 Vdc, VBE = − 3.0 Vdc) IBEX − 20 nAdc Collector−Emitter Cutoff Current (VCE = 60 Vdc, VBE = − 3.0 Vdc) ICEX − 10 nAdc Emitter−Base Cutoff Current (VEB = 3.0 Vdc, IC = 0) IEBO − 100 nAdc Collector−Base Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 60 Vdc, IE = 0, TA = 125°C) ICBO − − 10 10 nAdc mAdc ON CHARACTERISTICS DC Current Gain (IC = 0.1 mAdc, VCE = 10 Vdc) (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc, TA = − 55°C) (IC = 150 mAdc, VCE = 10 Vdc) (IC = 150 mAdc, VCE = 1.0 Vdc) (IC = 500 mAdc, VCE = 10 Vdc) hFE 35 50 70 35 100 50 40 − − − − 300 − − − Collector−Emitter Saturation Voltages (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) VCE(sat) − − 0.3 1.0 Vdc Base−Emitter Saturation Voltages (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) VBE(sat) 0.6 − 1.2 2.0 Vdc Input Impedance° (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) °hie° 2.0 0.25 8.0 1.25 kW Voltage Feedback Ratio (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) hre − − 8.0x10−4 4.0x10−4 − Small−Signal Current Gain (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) hfe 50 75 300 375 − Output Admittance° (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) °hoe° 5.0 25 35 200 mmhos Noise Figure (VCE = 10 Vdc, IC = 100 mAdc, f = 1.0 kHz) F − 4.0 dB DYNAMIC CHARACTERISTICS Current−Gain − Bandwidth Product (IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz) fT 300 − MHz Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cc − 8.0 pF Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Ce − 25 pF SWITCHING TIMES (TA = 25°C) Delay Time (VCC = 30 Vdc, IC = 150 mAdc, IB(on) = 15 mAdc, VEB(off) = 0.5 Vdc) Figure 1 td − 10 ns Rise Time tr − 25 Storage Time (VCC = 30 Vdc, IC = 150 mAdc, IB(on) = IB(off) = 15 mAdc) Figure 2 ts − 225 ns Fall Time tf − 60 |
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