PZT2222AT1G datasheet(4/5 Pages) ONSEMI

Nome de Peças	PZT2222AT1G

Descrição Electrónicos	NPN Silicon Planar Epitaxial Transistor

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Fabricante Electrônico	ONSEMI [ON Semiconductor]

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PZT2222A

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TYPICAL CHARACTERISTICS

Figure 5. DC Current Gain vs. Collector

Current

Figure 6. Saturation Region

IC, COLLECTOR CURRENT (mA)

IB, BASE CURRENT (mA)

1000

100

10

1

0.1

10

100

1000

100

10

1

0.1

0.01

0.001

0

0.2

0.6

0.8

1.0

1.4

1.6

2.0

Figure 7. Base−Emitter Turn−On Voltage vs.

Collector Current

Figure 8. Capacitance

IC, COLLECTOR CURRENT (mA)

VR, REVERSE VOLTAGE (V)

1000

100

10

1

0.1

0.2

0.3

0.4

0.6

0.7

0.8

1.0

1.1

100

10

1

0.1

1

10

100

Figure 9. Safe Operating Area

VCE, COLLECTOR EMITTER VOLTAGE (V)

100

10

1

10

100

1000

TA = 25°C

TA = −55°C

TA = 150°C

VCE = 6 V

0.4

1.2

1.8

TA = 25°C

0.5

0.9

TA = 25°C

TA = −55°C

TA = 150°C

VCE = 2 V

Cibo

Cobo

0.0001

1 s

0.1

0.01

0.001

Single Pulse Test at TA = 25°C

Nº de peça semelhante - PZT2222AT1G

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ON Semiconductor	PZT2222AT1G	136Kb / 6P	NPN SILICON TRANSISTOR SURFACE MOUNT 1996 REV 2

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Descrição semelhante - PZT2222AT1G

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